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DC Field | Value | Language |
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dc.citation.endPage | 160 | - |
dc.citation.startPage | 154 | - |
dc.citation.title | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - |
dc.citation.volume | 33 | - |
dc.contributor.author | Ko, Kyung Yong | - |
dc.contributor.author | Kang, Hyemin | - |
dc.contributor.author | Lee, Wonseon | - |
dc.contributor.author | Lee, Chang-Wan | - |
dc.contributor.author | Park, Jusang | - |
dc.contributor.author | Lee, Hee Sung | - |
dc.contributor.author | Im, Seongil | - |
dc.contributor.author | Kim, Han-Gil | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Min, Byung-Wook | - |
dc.contributor.author | Kim, Hyungjun | - |
dc.date.accessioned | 2023-12-22T01:12:21Z | - |
dc.date.available | 2023-12-22T01:12:21Z | - |
dc.date.created | 2022-12-23 | - |
dc.date.issued | 2015-05 | - |
dc.description.abstract | Photodiodes made from core-shell nanowires (NWs) comprising n-type silicon (n-Si; core) and nitrogen-doped ZnO (ZnO:N; shell) were fabricated by atomic layer deposition of ZnO:N on vertically aligned Si Wis. The device properties were investigated as functions of nitrogen content of the ZnO:N shell. The electron-carrier concentration of ZnO:N was modulated by adjusting the concentration of the reactant, diluted ammonium hydroxide, from 0 to 30%. The rectification ratio and the reverse-current density of the ZnO:Nin-Si planar heterojunction were evaluated under dark condition for various NH4OH concentrations. The ZnO:N/n-Si heterojunction prepared with NH4OH 15% was found to have the lowest reverse-current density with a moderate resistivity. In order to realize an effective ZnO:N/n-Si photodiode, a ZnO:N layer prepared with 15% NH4OH was deposited on well-aligned Si nanowires. The core-shell NW photodiode showed more sensitive photodetecting performance in UV light than the planar photodiode. Also, the significantly enhanced performances of the core-shell NW photodiode were evaluated by examining its spectral responsivity. (C) 2015 Elsevier Ltd. All rights reserved. | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.33, pp.154 - 160 | - |
dc.identifier.doi | 10.1016/j.mssp.2015.02.004 | - |
dc.identifier.issn | 1369-8001 | - |
dc.identifier.scopusid | 2-s2.0-84923229171 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64123 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S136980011500075X?via%3Dihub | - |
dc.identifier.wosid | 000351652400022 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.title | Nitrogen-doped ZnO/n-Si core-shell nanowire photodiode prepared by atomic layer deposition | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Engineering; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Nitrogen-doped ZnO | - |
dc.subject.keywordAuthor | Core-shell nanowires | - |
dc.subject.keywordAuthor | Photodiode | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | ARRAY | - |
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