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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 132 | - |
dc.citation.startPage | 128 | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 343 | - |
dc.contributor.author | Choi, Taejin | - |
dc.contributor.author | Jung, Hanearl | - |
dc.contributor.author | Lee, Chang Wan | - |
dc.contributor.author | Mun, Ki-Yeung | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Park, Jusang | - |
dc.contributor.author | Kim, Hyungjun | - |
dc.date.accessioned | 2023-12-22T01:06:53Z | - |
dc.date.available | 2023-12-22T01:06:53Z | - |
dc.date.created | 2022-12-23 | - |
dc.date.issued | 2015-07 | - |
dc.description.abstract | A carbon tetrabromide (CBr4) precursor was employed for the chemical vapor deposition (CVD) of graphene, and the graphene growth characteristics as functions of the following key factors were then investigated: growth time, growth temperature, and the partial pressure of the precursor. The graphene was transferred onto a SiO2/Si substrate and characterized using transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, and the electrical properties were measured through the fabrication of field-effect transistors. Our results show that high yield and controllable growth are possible via CVD used with a CBr4 precursor. Thus, CBr4 precursor is a new alternative candidate for use in the mass production of graphene. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.343, pp.128 - 132 | - |
dc.identifier.doi | 10.1016/j.apsusc.2015.03.093 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.scopusid | 2-s2.0-84928786612 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64122 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0169433215006789?via%3Dihub | - |
dc.identifier.wosid | 000353381900016 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER | - |
dc.title | Growth characteristics of graphene synthesized via chemical vapor deposition using carbon tetrabromide precursor | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | Carbon tetrabromide | - |
dc.subject.keywordAuthor | Chemical vapor deposition | - |
dc.subject.keywordAuthor | High yield | - |
dc.subject.keywordAuthor | Bond dissociation energy | - |
dc.subject.keywordPlus | THERMODYNAMIC PROPERTIES | - |
dc.subject.keywordPlus | THERMAL-DECOMPOSITION | - |
dc.subject.keywordPlus | BROMOMETHYL RADICALS | - |
dc.subject.keywordPlus | COPPER | - |
dc.subject.keywordPlus | GAS | - |
dc.subject.keywordPlus | SPECTRA | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | LAYER | - |
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