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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 165 | - |
dc.citation.startPage | 160 | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 365 | - |
dc.contributor.author | Jang, Yujin | - |
dc.contributor.author | Yeo, Seungmin | - |
dc.contributor.author | Lee, Han-Bo-Ram | - |
dc.contributor.author | Kim, Hyungjun | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.date.accessioned | 2023-12-22T00:06:48Z | - |
dc.date.available | 2023-12-22T00:06:48Z | - |
dc.date.created | 2022-12-23 | - |
dc.date.issued | 2016-03 | - |
dc.description.abstract | Molybdenum disulfide (MoS2) thin films were grown directly on SiO2 covered wafers by atomic layer deposition (ALD) at the deposition temperatures ranging from 175 to 225 degrees C using molybdenum hexacarbonyl [Mo(CO)(6)] and H2S plasma as the precursor and reactant, respectively. Self-limited film growth on the thermally-grown SiO2 substrate was observed with both the precursor and reactant pulsing time. The growth rate was similar to 0.05 nm/cycle and a short incubation cycle of around 13 was observed at a deposition temperature of 175 degrees C. The MoS2 films formed nanocrystalline microstructure with a hexagonal crystal system (2H-MoS2), which was confirmed by X-ray diffraction and transmission electron microscopy. Single crystal MoS2 nanosheets, similar to 20 nm in size, were fabricated by controlling the number of ALD cycles. The ALD-MoS2 thin films exhibited good stoichiometry with negligible C impurities, approximately 0.1 at.% from Rutherford backscattering spectrometry (RBS). X-ray photoelectron spectroscopy confirmed the formation of chemical bonding from MoS2. The step coverage of ALD-MoS2 was approximately 75% at a 100 nm sized trench. Overall, the ALD-MoS2 process made uniform deposition possible on the wafer-scale (4 in. in diameter). (C) 2016 Elsevier B.V. All rights reserved. | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.365, pp.160 - 165 | - |
dc.identifier.doi | 10.1016/j.apsusc.2016.01.038 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.scopusid | 2-s2.0-84959547609 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64116 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0169433216000647?via%3Dihub | - |
dc.identifier.wosid | 000369960300022 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER | - |
dc.title | Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | MoS2 | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Mo(CO)(6) | - |
dc.subject.keywordAuthor | H2S plasma | - |
dc.subject.keywordAuthor | Step coverage | - |
dc.subject.keywordPlus | SOLID LUBRICANT FILMS | - |
dc.subject.keywordPlus | VAPOR-PHASE GROWTH | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | MOLYBDENUM | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | ORIENTATION | - |
dc.subject.keywordPlus | DISULFIDES | - |
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