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DC Field | Value | Language |
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dc.citation.endPage | 222 | - |
dc.citation.startPage | 218 | - |
dc.citation.title | MATERIALS LETTERS | - |
dc.citation.volume | 168 | - |
dc.contributor.author | Kim, Jun Beom | - |
dc.contributor.author | Jang, Byeonghyeon | - |
dc.contributor.author | Lee, Hyun-Jung | - |
dc.contributor.author | Han, Won Seok | - |
dc.contributor.author | Lee, Do-Joong | - |
dc.contributor.author | Lee, Han-Bo-Ram | - |
dc.contributor.author | Hong, Tae Eun | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.date.accessioned | 2023-12-21T23:47:09Z | - |
dc.date.available | 2023-12-21T23:47:09Z | - |
dc.date.created | 2023-01-06 | - |
dc.date.issued | 2016-04 | - |
dc.description.abstract | This work reports a capability for a controlled preparation of tungsten nitride and carbide thin films via an atomic layer deposition (ALD) approach. Those films were deposited by ALD using a fluorine- and nitrogen -free W metallorganic precursor of tungsten tris(3-hexyne) carbonyl [W(CO)(CH3CH2C CH2CH3)] and a N-2 + H-2 mixture plasma as a reactant at a deposition temperature of 250 degrees C. It was found that a phase, microstructure and composition of the films could be controlled in precision by varying a gas flow rate ratio of N-2/H-2 in the plasma reactant. With the N-2/H-2 gas ratio of 1:3 and 1:5, W -rich polycrystalline WNx thin films (W/N ratio: similar to 1.39) were deposited with a resistivity of 700-900 mu Omega cm, while nano -crystalline (close to an amorphous) W -rich WCx films (W/C ratio: similar to 1.26) with a much lower resistivity of similar to 510 mu Omega cm, without any nitrogen incorporation, were formed when H-2 gas became extremely rich (N-2/H-2 gas ratio of 1:10). Both X-ray diffraction and electron diffraction analyses revealed that the ALD-WCx films were composed of hexagonal W2C, WC, and non-stoichiometric cubic beta-WCx. while the ALD-WNx films of cubic W2N. (C) 2016 Elsevier B.V. All rights reserved. | - |
dc.identifier.bibliographicCitation | MATERIALS LETTERS, v.168, pp.218 - 222 | - |
dc.identifier.doi | 10.1016/j.matlet.2016.01.071 | - |
dc.identifier.issn | 0167-577X | - |
dc.identifier.scopusid | 2-s2.0-84955505709 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64113 | - |
dc.identifier.url | http://dx.doi.org/10.1016/j.matlet.2016.01.071 | - |
dc.identifier.wosid | 000369492700054 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER | - |
dc.title | A controlled growth of WNx, and WCx thin films prepared by atomic layer deposition | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Tungsten carbide | - |
dc.subject.keywordAuthor | N-2/H-2 plasma | - |
dc.subject.keywordAuthor | Phase | - |
dc.subject.keywordAuthor | Microstructure | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Tungsten nitride | - |
dc.subject.keywordPlus | DIFFUSION BARRIER | - |
dc.subject.keywordPlus | TUNGSTEN CARBIDE | - |
dc.subject.keywordPlus | NITRIDE | - |
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