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DC Field | Value | Language |
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dc.citation.endPage | 658 | - |
dc.citation.startPage | 651 | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 663 | - |
dc.contributor.author | Jang, Yujin | - |
dc.contributor.author | Kim, Jun Beom | - |
dc.contributor.author | Hong, Tae Eun | - |
dc.contributor.author | Yeo, So Jeong | - |
dc.contributor.author | Lee, Sunju | - |
dc.contributor.author | Jung, Eun Ae | - |
dc.contributor.author | Park, Bo Keun | - |
dc.contributor.author | Chung, Taek-Mo | - |
dc.contributor.author | Kim, Chang Gyoun | - |
dc.contributor.author | Lee, Do-Joong | - |
dc.contributor.author | Lee, Han-Bo-Ram | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.date.accessioned | 2023-12-21T23:47:06Z | - |
dc.date.available | 2023-12-21T23:47:06Z | - |
dc.date.created | 2023-01-06 | - |
dc.date.issued | 2016-04 | - |
dc.description.abstract | Molybdenum nitride (Mo2N) thin films were grown by atomic layer deposition (ALD) using a sequential supply of a newly synthesized Mo metalorgranic precursor, Mo((NBu)-Bu-t)(2)((SBu)-Bu-t)(2), and H-2 plasma at a substrate temperature of 300 degrees C. A newly proposed ALD system exhibited typical ALD characteristics, such as a self-limited film growth and a linear dependency of the film thickness on the number of ALD cycles, and showed a growth rate of 0.028 nm/cycle on a thermally grown SiO2 substrate. Such the ideal ALD growth characteristics enabled excellent step coverage of similar to 80% for the ALD-grown Mo2N film onto nano-trenches with a width of 25 nm and an aspect ratio similar to 4.5. The optimized film had a resistivity as low as similar to 350 mu Omega-cm. X-ray diffraction, Rutherford backscattering spectrometry, and X-ray photoelectron spectroscopy analyses confirmed that formation of N-rich cubic Mo2N (N/Mo = similar to 0.7) phase with carbon and sulfur impurities of 2.6 and 7.4 at.%, respectively. Plan-view transmission electron microscopy analysis showed that the film formed a nanocrystalline microstructure with 5-8-nm-sized grains embedded in an amorphous matrix. An ultrathin (only similar to 4 nm-thick) ALD-grown Mo2N film effectively prevented diffusion of Cu into Si after annealing at a temperature even up to 650 degrees C. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.663, pp.651 - 658 | - |
dc.identifier.doi | 10.1016/j.jallcom.2015.12.148 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.scopusid | 2-s2.0-84953223060 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64112 | - |
dc.identifier.url | http://dx.doi.org/10.1016/j.jallcom.2015.12.148 | - |
dc.identifier.wosid | 000369060200089 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering | - |
dc.relation.journalResearchArea | Chemistry; Materials Science; Metallurgy & Metallurgical Engineering | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Molybdenum nitride | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Diffusion barrier | - |
dc.subject.keywordAuthor | Nanocrystalline | - |
dc.subject.keywordAuthor | Step coverage | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | MOXN FILMS | - |
dc.subject.keywordPlus | GATE | - |
dc.subject.keywordPlus | GROWTH | - |
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