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DC Field | Value | Language |
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dc.citation.number | 3 | - |
dc.citation.startPage | 031509 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.volume | 34 | - |
dc.contributor.author | Lee, Seung-Joon | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Saito, Masayuki | - |
dc.contributor.author | Suzuki, Kazuharu | - |
dc.contributor.author | Nabeya, Shunichi | - |
dc.contributor.author | Lee, Jeongyeop | - |
dc.contributor.author | Kim, Sangdeok | - |
dc.contributor.author | Yeom, Seungjin | - |
dc.contributor.author | Lee, Do-Joong | - |
dc.date.accessioned | 2023-12-21T23:41:46Z | - |
dc.date.available | 2023-12-21T23:41:46Z | - |
dc.date.created | 2023-01-18 | - |
dc.date.issued | 2016-05 | - |
dc.description.abstract | The ruthenium (Ru) thin films were grown by atomic layer deposition (ALD) using a sequential supply of dicarbonyl-bis(5-methyl-2,4-hexanediketonato) Ru(II) (C16H22O6Ru) and H-2 as a reactant at a substrate temperature of 250 degrees C. Deposition was possible using H-2 molecules without a plasma by increasing the chamber pressure to above 10 Torr. Specifically, high-quality Ru films with a low resistivity of similar to 40 mu Omega cm and few amount of oxygen (similar to 1.2 at. %) were obtained under a chamber pressure of 300 Torr though the oxygen was contained in the precursor. Under the optimized conditions, self-limited film growth with regard to the precursor and reactant pulsing times was confirmed under elevated chamber pressures. The ALD-Ru process proposed in this study showed one of the highest growth rates of 0.12 nm/cycle on a thermally grown SiO2 substrate, as well as a very low number of incubation cycles (approximately 12 cycles). Cross-sectional view transmission electron microscopy showed that no interfacial oxide had formed during the deposition of the ALD-Ru films on a W surface using H-2 molecules, whereas similar to 7 nm thick interfacial oxide was formed when O-2 molecules were used as a reactant. The step coverage of the ALD-Ru film onto very small-sized trenches (aspect ratio: similar to 4.5 and the top opening size of 25 nm) and holes (aspect ratio: similar to 40 and top opening size of 40 nm) was excellent (similar to 100%). (C) 2016 American Vacuum Society. | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.34, no.3, pp.031509 | - |
dc.identifier.doi | 10.1116/1.4946755 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.scopusid | 2-s2.0-84966348843 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64111 | - |
dc.identifier.url | https://avs.scitation.org/doi/10.1116/1.4946755 | - |
dc.identifier.wosid | 000379792200025 | - |
dc.language | 영어 | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | Plasma-free atomic layer deposition of Ru thin films using H-2 molecules as a nonoxidizing reactant | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films; Physics, Applied | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | RUTHENIUM | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | ALD | - |
dc.subject.keywordPlus | ELECTRODEPOSITION | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | TUNGSTEN | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.subject.keywordPlus | NH3 | - |
dc.subject.keywordPlus | DRY | - |
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