There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 410 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 404 | - |
dc.citation.title | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.volume | 12 | - |
dc.contributor.author | Kim, Hangil | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Ko, Kyung Yong | - |
dc.contributor.author | Kim, Hyungjun | - |
dc.contributor.author | Kim, Jaehoon | - |
dc.contributor.author | Oh, Jihun | - |
dc.contributor.author | Lee, Han-Bo-Ram | - |
dc.date.accessioned | 2023-12-21T23:41:44Z | - |
dc.date.available | 2023-12-21T23:41:44Z | - |
dc.date.created | 2023-01-30 | - |
dc.date.issued | 2016-05 | - |
dc.description.abstract | A highly efficient n-Si/p-Cu2O core-shell (C-S) nanowire (NW) photodiode was fabricated using Cu2O grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Ordered Si nanowires arrays were fabricated by nano-sphere lithography to pattern metal catalysts for the metal-assisted etching of silicon, resulting in a Si NW arrays with a good arrangement, smooth surface and small diameter distribution. The ALD-Cu2O thin films were grown using a new non-fluorinated Cu precursor, bis(1-dimethylamino-2-methyl-2-butoxy)copper (C14H32N2O2Cu), and water vapor (H2O) at 140A degrees C. Transmission electron microscopy equipped with an energy dispersive spectrometer confirmed that p-Cu2O thin films had been coated over arrayed Si NWs with a diameter of 150 nm (aspect ratio of similar to 7.6). The C-S NW photodiode exhibited more sensitive photodetection performance under ultraviolet illumination as well as an enhanced photocurrent density in the forward biasing region than the planar structure diode. The superior performance of C-S NWs photodiode was explained by the lower reflectance of light and the effective carrier separation and collection originating from the C-S NWs structure. | - |
dc.identifier.bibliographicCitation | ELECTRONIC MATERIALS LETTERS, v.12, no.3, pp.404 - 410 | - |
dc.identifier.doi | 10.1007/s13391-016-5356-2 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.scopusid | 2-s2.0-84964701677 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64110 | - |
dc.identifier.url | https://link.springer.com/article/10.1007/s13391-016-5356-2 | - |
dc.identifier.wosid | 000375053100012 | - |
dc.language | 영어 | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.title | High efficiency n-Si/p-Cu2O core-shell nanowires photodiode prepared by atomic layer deposition of Cu2O on well-ordered Si nanowires array | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.subject.keywordAuthor | Si nanowires | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | Si/Cu2O heterojunction | - |
dc.subject.keywordAuthor | photodiode | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | SILICON NANOWIRES | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | POWER | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.