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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 437 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 430 | - |
dc.citation.title | KOREAN JOURNAL OF MATERIALS RESEARCH | - |
dc.citation.volume | 26 | - |
dc.contributor.author | Jang, Byeonghyeon | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.date.accessioned | 2023-12-21T23:36:40Z | - |
dc.date.available | 2023-12-21T23:36:40Z | - |
dc.date.created | 2023-01-30 | - |
dc.date.issued | 2016-07 | - |
dc.description.abstract | Aluminum oxide (Al2O3) thin films were grown by atomic layer deposition (ALD) using a new Al metalorganic precursor, dimethyl aluminum sec-butoxide (C12H30Al2O2), and water vapor (H2O) as the reactant at deposition temperatures ranging from 150 to 300 °C. The ALD process showed typical self-limited film growth with precursor and reactant pulsing time at 250 °C; the growth rate was 0.095 nm/cycle, with no incubation cycle. This is relatively lower and more controllable than the growth rate in the typical ALD-Al2O3 process, which uses trimethyl aluminum (TMA) and shows a growth rate of 0.11 nm/cycle. The as-deposited ALD-Al2O3 film was amorphous; X-ray diffraction and transmission electron microscopy confirmed that its amorphous state was maintained even after annealing at 1000 °C. The refractive index of the ALD-Al2O3 films ranged from 1.45 to 1.67; these values were dependent on the deposition temperature. X-ray photoelectron spectroscopy showed that the ALD-Al2O3 films deposited at 250°C were stoichiometric, with no carbon impurity. The step coverage of the ALD-Al2O3 film was perfect, at approximately 100%, at the dual trench structure, with an aspect ratio of approximately 6.3 (top opening size of 40 nm). With capacitance-voltage measurements of the Al/ALD-Al2O3/p-Si structure, the dielectric constant of the ALD-Al2O3 films deposited at 250 °C was determined to be ~8.1, with a leakage current density on the order of 10−8 A/cm2 at 1 V. | - |
dc.identifier.bibliographicCitation | KOREAN JOURNAL OF MATERIALS RESEARCH, v.26, no.8, pp.430 - 437 | - |
dc.identifier.doi | 10.3740/mrsk.2016.26.8.430 | - |
dc.identifier.issn | 1225-0562 | - |
dc.identifier.scopusid | 2-s2.0-84997765005 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64106 | - |
dc.identifier.url | http://journal.mrs-k.or.kr/journal/article.php?code=44128 | - |
dc.language | 영어 | - |
dc.publisher | MATERIALS RESEARCH SOC KOREA | - |
dc.title | Atomic Layer Deposition of Al2O3 Thin Films Using Dimethyl Aluminum sec-Butoxide and H2O Molecules | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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