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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 2132 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 2128 | - |
dc.citation.title | SCIENCE OF ADVANCED MATERIALS | - |
dc.citation.volume | 8 | - |
dc.contributor.author | Kim, Jeong-Hyun | - |
dc.contributor.author | Kim, Seung-Won | - |
dc.contributor.author | Kim, Byoung O. | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Seo, Jong Hyun | - |
dc.date.accessioned | 2023-12-21T23:06:59Z | - |
dc.date.available | 2023-12-21T23:06:59Z | - |
dc.date.created | 2023-01-06 | - |
dc.date.issued | 2016-11 | - |
dc.description.abstract | The effects of various post annealing treatments for back channel etched InGaZnO thin film transistors were compared. A novel post wet annealing method was proposed to enhance the electrical properties of IGZO TFTs with a copper/molybdenum source/drain using ultraviolet illumination. Compared to previously reported post wet/dry treatments, the new post wet annealing was effective in increasing the on/off current (i(on)/i(off)) ratios and lowering the threshold voltages (V-th) of the oxide TFTs. The treatment time was less than 30 min, and the wet chemical temperature was below 60 degrees C. The i(on)/i(off) ratios of the transistors were enhanced two fold, and the Vth values shifted in the negative direction compared to the values resulting from thermal annealing at 300 degrees C for 1 hour. It was concluded that UV wet annealing is a very effective method in enhancing the electrical properties of IGZO transistors fabricated on flexible substrates. | - |
dc.identifier.bibliographicCitation | SCIENCE OF ADVANCED MATERIALS, v.8, no.11, pp.2128 - 2132 | - |
dc.identifier.doi | 10.1166/sam.2016.2839 | - |
dc.identifier.issn | 1947-2935 | - |
dc.identifier.scopusid | 2-s2.0-85012224967 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64101 | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/sam/2016/00000008/00000011/art00016;jsessionid=b69hlphf9541q.x-ic-live-03 | - |
dc.identifier.wosid | 000392836700016 | - |
dc.language | 영어 | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Effects of Ultra-Violet Wet Annealing on Electrical Performance of Back Channel Etching Cu/Mo/IGZO 4 Mask Thin Film Transistor | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | UV Wet Annealing | - |
dc.subject.keywordAuthor | InGaZnO | - |
dc.subject.keywordAuthor | Thin Film Transistor | - |
dc.subject.keywordAuthor | Back Channel Etching | - |
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