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DC Field | Value | Language |
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dc.citation.number | 3 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.volume | 35 | - |
dc.contributor.author | Jung, Hanearl | - |
dc.contributor.author | Oh, Il-Kwon | - |
dc.contributor.author | Yeo, Seungmin | - |
dc.contributor.author | Kim, Hyungjun | - |
dc.contributor.author | Lee, Su Jeong | - |
dc.contributor.author | Kim, Yun Cheol | - |
dc.contributor.author | Myoung, Jae-Min | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Lim, Jun Hyung | - |
dc.contributor.author | Lee, Sunhee | - |
dc.date.accessioned | 2023-12-21T22:13:02Z | - |
dc.date.available | 2023-12-21T22:13:02Z | - |
dc.date.created | 2022-12-23 | - |
dc.date.issued | 2017-05 | - |
dc.description.abstract | The deposition of high-quality ZrO2 films has been achieved using both pulsed plasma-enhanced chemical vapor deposition (P-PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) with (C5H5)Zr[N(CH3)(2)](3) as a Zr precursor. The authors compared the growth characteristics, chemical compositions, and electrical properties of P-PE-CVD and PE-ALD ZrO2 prepared under various deposition conditions. The ZrO2 films prepared using both methods showed high purity and good stoichiometry. Electrical characterization of a metal-oxide-semiconductor capacitor utilizing the ZrO2 films showed that PE-ALD films have a relatively lower leakage current than P-PE-CVD films, whereas the dielectric constant, interface trap density, and hysteresis of both films are similar. Applying both methods, the electrical properties of ZrO2 films were also evaluated using In-Ga-Zn-O thin-film transistors (TFTs), which showed a good device performance in terms of high I-on-I-off ratios (> 10(8)) and low off-currents (< 10(-11) A). In addition, ZrO2-based TFT showed high reliability against a negative V-th shift. Based on the self-limiting growth characteristics and electrical properties of P-PE-CVD, the authors found that the P-PE-CVD process results in electrical properties comparable to those of PE-ALD ZrO2 films. Thus, the authors believe that P-PECVD can be an alternative process to PE-ALD for future electronic device applications, especially for display applications due to its good electrical properties with high throughput. (C) 2017 American Vacuum Society. | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.35, no.3 | - |
dc.identifier.doi | 10.1116/1.4982224 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.scopusid | 2-s2.0-85018420981 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64095 | - |
dc.identifier.url | https://avs.scitation.org/doi/10.1116/1.4982224 | - |
dc.identifier.wosid | 000401122700032 | - |
dc.language | 영어 | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films; Physics, Applied | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | SELF-LIMITING DEPOSITION | - |
dc.subject.keywordPlus | ALUMINUM-OXIDE | - |
dc.subject.keywordPlus | DEVICE PERFORMANCE | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | PRECURSORS | - |
dc.subject.keywordPlus | THICKNESS | - |
dc.subject.keywordPlus | TFT | - |
dc.subject.keywordPlus | ALD | - |
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