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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 401 | - |
dc.citation.startPage | 393 | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 685 | - |
dc.contributor.author | Kim, Jun Beom | - |
dc.contributor.author | Nandi, Dip K. | - |
dc.contributor.author | Kim, Tae Hyun | - |
dc.contributor.author | Jang, Yujin | - |
dc.contributor.author | Bae, Jong-Seong | - |
dc.contributor.author | Hong, Tae Eun | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.date.accessioned | 2023-12-21T18:40:28Z | - |
dc.date.available | 2023-12-21T18:40:28Z | - |
dc.date.created | 2023-01-05 | - |
dc.date.issued | 2019-09 | - |
dc.description.abstract | Tungsten nitride (WNx) thin films were deposited on SiO2 substrates by atomic layer deposition (ALD) using a fluorine- free tungsten metal-organic precursor of tris(3-hexyne) tungsten carbonyl, W(CO) (CH3CH2C CCH2CH3)(3) and NH3 plasma as a reactant at a deposition temperature of 250 degrees C. Important ALD characteristics, such as self-limiting growth and linear dependency of the film growth on the number of ALD cycles, were obtained with a growth rate of 0.045 nm/cycle. The minimum film resistivity of around similar to 2800 mu Omega cm (thickness: similar to 13.3 nm) was stable after 3 days air-exposure, indicating the high stability of these WNx films. Rutherford backscattering spectrometry showed that the N-rich WNx thin films (N/W ratio: similar to 1.56) were deposited with negligible impurities of C and O. Both X-ray diffractometry and transmission electron microscopy analysis showed that ALD-WNx films formed a polycrystalline cubic WN phase with an average grainsize of similar to 6 nm. From scanning Kelvin probe analysis, its work function was determined as 4.79 eV. Detail investigations were carried out after post-annealing of the as-deposited films and formation of metallic-W with significantly reduced sheet resistance was observed upon annealing at and beyond 700 degrees C. Finally, the ultrathin (similar to 5 nm) ALD-grown WNx film effectively prevented diffusion of Cu even up to 550 degrees C, promising it as an efficient diffusion barrier material for the Cu interconnect. | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.685, pp.393 - 401 | - |
dc.identifier.doi | 10.1016/j.tsf.2019.06.051 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.scopusid | 2-s2.0-85068362416 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64076 | - |
dc.identifier.url | http://dx.doi.org/10.1016/j.tsf.2019.06.051 | - |
dc.identifier.wosid | 000476884100053 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Tungsten nitride | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | F-free precursor | - |
dc.subject.keywordAuthor | NH3 plasma | - |
dc.subject.keywordAuthor | Diffusion barrier | - |
dc.subject.keywordAuthor | Cu metallization | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | STEP COVERAGE | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | WF6 | - |
dc.subject.keywordPlus | RESISTIVITY | - |
dc.subject.keywordPlus | REDUCTION | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | GROWTH | - |
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