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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 3411 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 3403 | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 9 | - |
dc.contributor.author | Thakre, Atul | - |
dc.contributor.author | Kumar, Ajeet | - |
dc.contributor.author | Lee, Min-Young | - |
dc.contributor.author | Patil, Deepak Rajaram | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Ryu, Jungho | - |
dc.date.accessioned | 2023-12-21T16:08:36Z | - |
dc.date.available | 2023-12-21T16:08:36Z | - |
dc.date.created | 2022-12-22 | - |
dc.date.issued | 2021-03 | - |
dc.description.abstract | A thin dielectric layer of Al2O3 was grown by atomic layer deposition on a relaxor ferroelectric 65Pb(Mg1/3Nb2/3)O-3-35PbTiO(3) (PMN-PT)/Pt/Si thick film fabricated by the aerosol deposition technique to artificially induce ferroelectric behaviour. The frequency and temperature-dependent dielectric properties with a reduced degree of diffuseness (gamma, from 1.9 to 1.5) and the change in the shape of the polarization-electric field curves (from slim relaxor with low hysteresis to square type ferroelectric with high hysteresis) confirm the modulation of its pristine relaxor ferroelectric nature with a change in the Al2O3 layer thickness. An increase in the maximum dielectric temperature (T-m), remnant polarisation (P-r), coercive field (E-c), and impedance was observed with increasing thickness of the Al2O3 dielectric layer, which can be attributed to the accumulation of charge carriers at the interface of the Pt/Al2O3/PMN-PT/Pt/Si heterostructure in the presence of an external electric field. Leakage characteristics also support the artificially induced ferroelectric behaviour in the Pt/Al2O3/PMN-PT/Pt/Si heterostructure. The aftereffects of the dielectric Al2O3 interface layer over the relaxor ferroelectric film is discussed in detail. | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.9, no.10, pp.3403 - 3411 | - |
dc.identifier.doi | 10.1039/d0tc05644h | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.scopusid | 2-s2.0-85102958909 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64061 | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2021/TC/D0TC05644H | - |
dc.identifier.wosid | 000631347900037 | - |
dc.language | 영어 | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Artificially induced normal ferroelectric behaviour in aerosol deposited relaxor 65PMN-35PT thick films by interface engineering | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | INDUCED PHASE-TRANSITION | - |
dc.subject.keywordPlus | ENERGY-STORAGE PERFORMANCE | - |
dc.subject.keywordPlus | ATOMIC-LAYER-DEPOSITION | - |
dc.subject.keywordPlus | AL2O3 FILMS | - |
dc.subject.keywordPlus | CERAMICS | - |
dc.subject.keywordPlus | DENSITY | - |
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