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DC Field | Value | Language |
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dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 753 | - |
dc.contributor.author | Bak, Yang Gyu | - |
dc.contributor.author | Park, Ji Woon | - |
dc.contributor.author | Park, Ye Jin | - |
dc.contributor.author | Ansari, Mohd Zahid | - |
dc.contributor.author | NamGung, Sook | - |
dc.contributor.author | Cho, Bo Yeon | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Lee, Hee Young | - |
dc.date.accessioned | 2023-12-21T13:50:13Z | - |
dc.date.available | 2023-12-21T13:50:13Z | - |
dc.date.created | 2022-12-20 | - |
dc.date.issued | 2022-07 | - |
dc.description.abstract | Indium zinc tin oxide (IZTO) semiconducting thin films have been investigated as active channel layers for thin-film transistor (TFT) applications. The IZTO layer was deposited by radio frequency magnetron sputtering (RFMS) using a sintered IZTO ceramic target with an In:Zn:Sn metal atomic ratio of 40:50:10 on the HfO2 layer either deposited using an atomic layer deposition (ALD) or RF-MS. The annealing treatments after IZTO and HfO2 film depositions were performed in air using a tube furnace and in an oxygen atmosphere using rapid thermal annealing at 400 degrees C, respectively. Optical transparency measured by UV-Vis spectroscopy showed that the HfO2 films deposited by either RF-MS or ALD were transparent in the visible region and had a similar band gap energy of about 4.9 eV. Electrical characteristics of IZTO based TFT were comparatively evaluated for the samples with IZTO/ALD or RF-MS HfO2/n(++)-Si structure. The IZTO TFT sample with 60 nm-thick HfO2 deposited by ALD had an on/off current ratio value of 7.0 x 10(6) and a field-effect mobility value of 6.2 cm(2)/Vs, which was superior to that with RF-MS deposited HfO2. | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.753 | - |
dc.identifier.doi | 10.1016/j.tsf.2022.139290 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.scopusid | 2-s2.0-85129971003 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64044 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609022002048?via%3Dihub | - |
dc.identifier.wosid | 000833546900003 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | In-Zn-Sn-O thin film based transistor with high-k HfO2 dielectric | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Indium zinc tin oxide | - |
dc.subject.keywordAuthor | Hafnium dioxide | - |
dc.subject.keywordAuthor | Thin film | - |
dc.subject.keywordAuthor | Radio-frequency magnetron sputtering | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Rapid thermal annealing | - |
dc.subject.keywordAuthor | Metal-oxide-semiconductor capacitor | - |
dc.subject.keywordAuthor | Oxide thin film transistor | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | KAPPA GATE DIELECTRICS | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | OXIDE-SEMICONDUCTOR | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | INSULATOR | - |
dc.subject.keywordPlus | SIO2 | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | PRESSURE | - |
dc.subject.keywordPlus | TFT | - |
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