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김수현

Kim, Soo-Hyun
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dc.citation.startPage 156834 -
dc.citation.title APPLIED SURFACE SCIENCE -
dc.citation.volume 620 -
dc.contributor.author Ansari, Mohd Zahid -
dc.contributor.author Janicek, Petr -
dc.contributor.author Park, Ye Jin -
dc.contributor.author NamGung, Sook -
dc.contributor.author Cho, Bo Yeon -
dc.contributor.author Nandi, Dip K. -
dc.contributor.author Jang, Yujin -
dc.contributor.author Bae, Jong-Seong -
dc.contributor.author Hong, Tae Eun -
dc.contributor.author Cheon, Taehoon -
dc.contributor.author Song, Wooseok -
dc.contributor.author An, Ki-Seok -
dc.contributor.author Kim, Soo-Hyun -
dc.date.accessioned 2023-12-21T12:40:35Z -
dc.date.available 2023-12-21T12:40:35Z -
dc.date.created 2023-04-12 -
dc.date.issued 2023-05 -
dc.description.abstract In the present study, HfO2 thin films were fabricated via atomic layer deposition (ALD) using a novel heteroleptic metal organic precursor [tris (dimethylamino) dimethylaminoboratabenzene hafnium] [eta(6):eta(1)-(C5H5BNMe2)Hf (NMe2)(3); (BBHf)] along with O-2 as the oxygen source at a range of growth temperatures (i.e., 150-350 degrees C). This novel precursor is a heteroleptic complex synthesized by the introduction of a boratabenzene ligand (BB) into the parent Hf metal sphere to achieve an enhanced thermal stability. In this system, O-2 is used as a mild oxygen-containing reactant to replace the typically employed ozone (O-3). Distinctive self-limiting deposition was established with a comparatively high growth per cycle value of 0.068 nm, and linear growth was observed as a function of the ALD cycle number. Thermal decomposition was not detected at or below 350 degrees C, thereby indicating the improved thermal stability compared to when frequently used Cp (cyclopentadienyl)-amide precursors are employed. Under the ALD deposition conditions employed herein (275 degrees C), a complete step coverage was achieved with a good conformality on high aspect ratio dual trenches [top and bottom widths = 40 and 15 nm, respectively, aspect ratio (AR) approximate to 6.3], and uniformity was obtained on the large planar substrate (15 cm diameter). Upon annealing at 700 degrees C, the as-grown film formed an amorphous structure with a slightly enhanced crystallinity, while annealing at 850 degrees C led to the generation of nanocrystalline HfO2 films with amorphous structures, as indicated by X-ray diffraction measurements. The as-grown films were determined to be slightly rich in oxygen compared to the stoichiometry of HfO2, although they also contained significant amounts of residual impurities, such as H, B, and C (similar to 6, 6, and 7 at.%, respectively), as confirmed by Rutherford back-scattering spectrometry and elastic recoil detection analyses. The impurity levels were further reduced by increasing the growth temperature and by subsequent post-annealing, as evidenced by X-ray photoelectron spectroscopy and secondary-ion mass spectrometry analyses. Finally, ellipsometry analysis was performed to measure the optical properties of the prepared ALD-HfO2 thin films. It is expected that the described process may be of significance in the preparation of high-k films wherein thermally stable amorphous films with extremely conformal and uniform coatings are required to fabricate next-generation electronic devices. -
dc.identifier.bibliographicCitation APPLIED SURFACE SCIENCE, v.620, pp.156834 -
dc.identifier.doi 10.1016/j.apsusc.2023.156834 -
dc.identifier.issn 0169-4332 -
dc.identifier.scopusid 2-s2.0-85149169290 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/64027 -
dc.identifier.wosid 000949722300001 -
dc.language 영어 -
dc.publisher ELSEVIER -
dc.title Preparation of wafer-scale highly conformalamorphous hafnium dioxide thin films by atomic layer deposition using a thermally stable boratabenzene ligand-containing hafnium precursor -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter -
dc.relation.journalResearchArea Chemistry; Materials Science; Physics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor Amorphous hafnium dioxide -
dc.subject.keywordAuthor Thin films -
dc.subject.keywordAuthor Atomic layer deposition -
dc.subject.keywordAuthor Boratabenzene ligand -
dc.subject.keywordAuthor Wafer-scale films -
dc.subject.keywordPlus HFO2 FILMS -
dc.subject.keywordPlus OPTICAL-PROPERTIES -
dc.subject.keywordPlus GROWTH -
dc.subject.keywordPlus OXIDE -
dc.subject.keywordPlus H2O -
dc.subject.keywordPlus ALD -
dc.subject.keywordPlus SILICON -
dc.subject.keywordPlus METALS -
dc.subject.keywordPlus HFCL4 -
dc.subject.keywordPlus O-3 -

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