There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.startPage | 156834 | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 620 | - |
dc.contributor.author | Ansari, Mohd Zahid | - |
dc.contributor.author | Janicek, Petr | - |
dc.contributor.author | Park, Ye Jin | - |
dc.contributor.author | NamGung, Sook | - |
dc.contributor.author | Cho, Bo Yeon | - |
dc.contributor.author | Nandi, Dip K. | - |
dc.contributor.author | Jang, Yujin | - |
dc.contributor.author | Bae, Jong-Seong | - |
dc.contributor.author | Hong, Tae Eun | - |
dc.contributor.author | Cheon, Taehoon | - |
dc.contributor.author | Song, Wooseok | - |
dc.contributor.author | An, Ki-Seok | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.date.accessioned | 2023-12-21T12:40:35Z | - |
dc.date.available | 2023-12-21T12:40:35Z | - |
dc.date.created | 2023-04-12 | - |
dc.date.issued | 2023-05 | - |
dc.description.abstract | In the present study, HfO2 thin films were fabricated via atomic layer deposition (ALD) using a novel heteroleptic metal organic precursor [tris (dimethylamino) dimethylaminoboratabenzene hafnium] [eta(6):eta(1)-(C5H5BNMe2)Hf (NMe2)(3); (BBHf)] along with O-2 as the oxygen source at a range of growth temperatures (i.e., 150-350 degrees C). This novel precursor is a heteroleptic complex synthesized by the introduction of a boratabenzene ligand (BB) into the parent Hf metal sphere to achieve an enhanced thermal stability. In this system, O-2 is used as a mild oxygen-containing reactant to replace the typically employed ozone (O-3). Distinctive self-limiting deposition was established with a comparatively high growth per cycle value of 0.068 nm, and linear growth was observed as a function of the ALD cycle number. Thermal decomposition was not detected at or below 350 degrees C, thereby indicating the improved thermal stability compared to when frequently used Cp (cyclopentadienyl)-amide precursors are employed. Under the ALD deposition conditions employed herein (275 degrees C), a complete step coverage was achieved with a good conformality on high aspect ratio dual trenches [top and bottom widths = 40 and 15 nm, respectively, aspect ratio (AR) approximate to 6.3], and uniformity was obtained on the large planar substrate (15 cm diameter). Upon annealing at 700 degrees C, the as-grown film formed an amorphous structure with a slightly enhanced crystallinity, while annealing at 850 degrees C led to the generation of nanocrystalline HfO2 films with amorphous structures, as indicated by X-ray diffraction measurements. The as-grown films were determined to be slightly rich in oxygen compared to the stoichiometry of HfO2, although they also contained significant amounts of residual impurities, such as H, B, and C (similar to 6, 6, and 7 at.%, respectively), as confirmed by Rutherford back-scattering spectrometry and elastic recoil detection analyses. The impurity levels were further reduced by increasing the growth temperature and by subsequent post-annealing, as evidenced by X-ray photoelectron spectroscopy and secondary-ion mass spectrometry analyses. Finally, ellipsometry analysis was performed to measure the optical properties of the prepared ALD-HfO2 thin films. It is expected that the described process may be of significance in the preparation of high-k films wherein thermally stable amorphous films with extremely conformal and uniform coatings are required to fabricate next-generation electronic devices. | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.620, pp.156834 | - |
dc.identifier.doi | 10.1016/j.apsusc.2023.156834 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.scopusid | 2-s2.0-85149169290 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64027 | - |
dc.identifier.wosid | 000949722300001 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER | - |
dc.title | Preparation of wafer-scale highly conformalamorphous hafnium dioxide thin films by atomic layer deposition using a thermally stable boratabenzene ligand-containing hafnium precursor | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Amorphous hafnium dioxide | - |
dc.subject.keywordAuthor | Thin films | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Boratabenzene ligand | - |
dc.subject.keywordAuthor | Wafer-scale films | - |
dc.subject.keywordPlus | HFO2 FILMS | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | H2O | - |
dc.subject.keywordPlus | ALD | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | METALS | - |
dc.subject.keywordPlus | HFCL4 | - |
dc.subject.keywordPlus | O-3 | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.