There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 7677 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 7671 | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 8 | - |
dc.contributor.author | Choi, Insung | - |
dc.contributor.author | Jeong, Hu Young | - |
dc.contributor.author | Jung, Dae Yool | - |
dc.contributor.author | Byun, Myunghwan | - |
dc.contributor.author | Choi, Choon-Gi | - |
dc.contributor.author | Hong, Byung Hee | - |
dc.contributor.author | Choi, Sung-Yool | - |
dc.contributor.author | Lee, Keon Jae | - |
dc.date.accessioned | 2023-12-22T02:16:23Z | - |
dc.date.available | 2023-12-22T02:16:23Z | - |
dc.date.created | 2014-09-23 | - |
dc.date.issued | 2014-08 | - |
dc.description.abstract | There have been numerous efforts to improve the performance of graphene-based electronic devices by chemical doping. Most studies have focused on gas-phase doping with chemical vapor deposition. However, that requires a complicated transfer process that causes undesired doping and defects by residual polymers. Here, we report a solid-phase synthesis of doped graphene by means of silicon carbide (SiC) substrate including a dopant source driven by pulsed laser irradiation. This method provides in situ direct growth of doped graphene on an insulating SiC substrate without a transfer step. A numerical simulation on the temperature history of the SiC surface during laser irradiation reveals that the surface temperature of SiC can be accurately controlled to grow nitrogen-doped graphene from the thermal decomposition of nitrogen-doped SiC. Laser-induced solid-phase doped graphene is highly promising for the realization of graphene-based nanoelectronics with desired functionalities. | - |
dc.identifier.bibliographicCitation | ACS NANO, v.8, no.8, pp.7671 - 7677 | - |
dc.identifier.doi | 10.1021/nn5032214 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.scopusid | 2-s2.0-84906693612 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/6228 | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/nn5032214 | - |
dc.identifier.wosid | 000340992300012 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Laser-induced solid-phase doped graphene | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | laser | - |
dc.subject.keywordAuthor | nitrogen-doped graphene | - |
dc.subject.keywordAuthor | silicon carbide | - |
dc.subject.keywordAuthor | solid-phase synthesis | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.