Synthesis of Si Nanowires by Using Atmospheric Pressure Chemical Vapor Deposition with SiCl4

Abstract

Silicon nanowires were synthesized by using a vapor-liquid-solid method and atmospheric pressure chemical vapor deposition with silicon tetrachloride as the Si source. A thin Au film (1-nm thick) deposited on a Si substrate was used as a catalyst, and Au nanodots were formed subsequently by using a high-temperature chemical vapor deposition process. Small-diameter Si nanowires (similar to 15 nm) with a thin amorphous oxide sheath (2 3 nm) were densely grown under the condition of abundant H-2 gas and proper N-2 carrier gas flow into the hot-wall chamber. The high crystallinity of the Si nanowires was verified by using high-resolution transmission electron microscopy, selected area electron diffraction, and Raman spectroscopy.