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DC Field | Value | Language |
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dc.citation.endPage | 238 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 233 | - |
dc.citation.title | PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA | - |
dc.citation.volume | 114 | - |
dc.contributor.author | Hosono, Hideo | - |
dc.contributor.author | Kim, Junghwan | - |
dc.contributor.author | Toda, Yoshitake | - |
dc.contributor.author | Kamiya, Toshio | - |
dc.contributor.author | Watanabe, Satoru | - |
dc.date.accessioned | 2023-12-21T22:42:05Z | - |
dc.date.available | 2023-12-21T22:42:05Z | - |
dc.date.created | 2023-01-16 | - |
dc.date.issued | 2017-01 | - |
dc.description.abstract | Efficient electron transfer between a cathode and an active organic layer is one key to realizing high-performance organic devices, which require electron injection/transport materials with very low work functions. We developed two wide-bandgap amorphous (a-) oxide semiconductors, a-calcium aluminate electride (a-C12A7:e) and a-zinc silicate (a-ZSO). A-ZSO exhibits a low work function of 3.5 eV and high electron mobility of 1 cm(2)/(V . s); furthermore, it also forms an ohmic contact with not only conventional cathode materials but also anode materials. A-C12A7:e has an exceptionally low work function of 3.0 eV and is used to enhance the electron injection property from a-ZSO to an emission layer. The inverted electron-only and organic light-emitting diode (OLED) devices fabricated with these two materials exhibit excellent performance compared with the normal type with LiF/Al. This approach provides a solution to the problem of fabricating oxide thin-film transistor-driven OLEDs with both large size and high stability. | - |
dc.identifier.bibliographicCitation | PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, v.114, no.2, pp.233 - 238 | - |
dc.identifier.doi | 10.1073/pnas.1617186114 | - |
dc.identifier.issn | 0027-8424 | - |
dc.identifier.scopusid | 2-s2.0-85009233143 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/62113 | - |
dc.identifier.wosid | 000391439300031 | - |
dc.language | 영어 | - |
dc.publisher | National Academy of Sciences | - |
dc.title | Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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