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김정환

Kim, Junghwan
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dc.citation.number 5 -
dc.citation.startPage 1700833 -
dc.citation.title PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE -
dc.citation.volume 216 -
dc.contributor.author Watanabe, Naoto -
dc.contributor.author Ide, Keisuke -
dc.contributor.author Kim, Junghwan -
dc.contributor.author Katase, Takayoshi -
dc.contributor.author Hiramatsu, Hidenori -
dc.contributor.author Hosono, Hideo -
dc.contributor.author Kamiya, Toshio -
dc.date.accessioned 2023-12-21T19:17:12Z -
dc.date.available 2023-12-21T19:17:12Z -
dc.date.created 2023-02-14 -
dc.date.issued 2019-03 -
dc.description.abstract Multi-color inorganic thin-film phosphors are deposited at room temperature on glass substrates using ultra-wide bandgap amorphous gallium oxide (a-GO) as a host material. All of the a-GO films doped with four kinds of rare-earth ions (a-GO:REx) emit visible light, originating from the RE ions, by 238-257 nm ultraviolet light excitation; that is, blue & red emission from RE = Pr3+, red from Sm3+, green from Tb3+, and blue and yellow from Dy3+. The a-GO:Pr-x and a-GO:Tb-x films emit bright light clearly visible by human eyes. Although the internal quantum efficiencies of unannealed a-GO:Pr-0.02 and a-GO:Tb-0.02 films are 0.2 and 1.8%, respectively, those are improved to 2.4 and 3.8 %, respectively, by post-deposition thermal annealing in O-2 at 400 degrees C through desorption of weakly-bonded oxygen and structural relaxation. On the other hand, the annealing temperature to improve photoluminescence is limited by crystallization (onset temperatures 400-500 degrees C). -
dc.identifier.bibliographicCitation PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.216, no.5, pp.1700833 -
dc.identifier.doi 10.1002/pssa.201700833 -
dc.identifier.issn 1862-6300 -
dc.identifier.scopusid 2-s2.0-85041202158 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/62092 -
dc.identifier.wosid 000460416600002 -
dc.language 영어 -
dc.publisher WILEY-V C H VERLAG GMBH -
dc.title Multiple Color Inorganic Thin-Film Phosphor, RE-Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter -
dc.relation.journalResearchArea Materials Science; Physics -
dc.type.docType Article; Proceedings Paper -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor amorphous oxide semiconductor -
dc.subject.keywordAuthor gallium oxide -
dc.subject.keywordAuthor rare earth -
dc.subject.keywordAuthor thin-film phosphor -
dc.subject.keywordPlus TERBIUM(III) -
dc.subject.keywordPlus PHOTOLUMINESCENCE -
dc.subject.keywordPlus EUROPIUM(III) -
dc.subject.keywordPlus LUMINESCENCE -

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