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DC Field | Value | Language |
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dc.citation.number | 1 | - |
dc.citation.startPage | 18868 | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 10 | - |
dc.contributor.author | On, Nuri | - |
dc.contributor.author | Kim, Bo Kyoung | - |
dc.contributor.author | Kim, Yerin | - |
dc.contributor.author | Kim, Eun Hyun | - |
dc.contributor.author | Lim, Jun Hyung | - |
dc.contributor.author | Hosono, Hideo | - |
dc.contributor.author | Kim, Junghwan | - |
dc.contributor.author | Yang, Hoichang | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.date.accessioned | 2023-12-21T16:40:57Z | - |
dc.date.available | 2023-12-21T16:40:57Z | - |
dc.date.created | 2023-02-14 | - |
dc.date.issued | 2020-11 | - |
dc.description.abstract | We investigated the effect of film thickness (geometrical confinement) on the structural evolution of sputtered indium-zinc-tin oxide (IZTO) films as high mobility n-channel semiconducting layers during post-treatment at different annealing temperatures ranging from 350 to 700 degrees C. Different thicknesses result in IZTO films containing versatile phases, such as amorphous, low-, and high-crystalline structures even after annealing at 700 degrees C. A 19-nm-thick IZTO film clearly showed a phase transformation from initially amorphous to polycrystalline bixbyite structures, while the ultra-thin film (5 nm) still maintained an amorphous phase. Transistors including amorphous and low crystalline IZTO films fabricated at 350 and 700 degrees C show reasonable carrier mobility (mu(FE)) and on/off current ratio (I-ON/OFF) values of 22.4-35.9 cm(2) V-1 s(-1) and 1.0-4.0x10(8), respectively. However, their device instabilities against positive/negative gate bias stresses (PBS/NBS) are unacceptable, originating from unsaturated bonding and disordered sites in the metal oxide films. In contrast, the 19-nm-thick annealed IZTO films included highly-crystalline, 2D spherulitic crystallites and fewer grain boundaries. These films show the highest mu(FE) value of 39.2 cm(2) V-1 s(-1) in the transistor as well as an excellent I-ON/OFF value of 9.7x10(8). Simultaneously, the PBS/NBS stability of the resulting transistor is significantly improved under the same stress condition. This promising superior performance is attributed to the crystallization-induced lattice ordering, as determined by highly-crystalline structures and the associated formation of discrete donor levels (similar to 0.31 eV) below the conduction band edge. | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.10, no.1, pp.18868 | - |
dc.identifier.doi | 10.1038/s41598-020-76046-w | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.scopusid | 2-s2.0-85094899043 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/62080 | - |
dc.identifier.wosid | 000589618700040 | - |
dc.language | 영어 | - |
dc.publisher | NATURE RESEARCH | - |
dc.title | Boosting carrier mobility and stability in indium-zinc-tin oxide thin-film transistors through controlled crystallization | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | GRAIN-BOUNDARIES | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | DEVICE | - |
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