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DC Field | Value | Language |
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dc.citation.endPage | 33471 | - |
dc.citation.number | 29 | - |
dc.citation.startPage | 33463 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 14 | - |
dc.contributor.author | Tsuji, Masatake | - |
dc.contributor.author | Iimura, Soshi | - |
dc.contributor.author | Kim, Junghwan | - |
dc.contributor.author | Hosono, Hideo | - |
dc.date.accessioned | 2023-12-21T13:49:44Z | - |
dc.date.available | 2023-12-21T13:49:44Z | - |
dc.date.created | 2023-02-14 | - |
dc.date.issued | 2022-07 | - |
dc.description.abstract | Copper iodide (CuI) is a promising p-type transparent semiconductor with excellent carrier mobility. However, the high hole concentration in conventionally fabricated CuI including the single crystal hinders its applicability to the channel layer of thin-film transistors. We found that Zn substitution into Cu+ sites can effectively reduce the hole concentration. Experimental and computational examinations showed that the dominant mechanism involved the formation of a defect pair, the Zn-substituted Cu site (Zn-Cu) and Cu vacancy (V-Cu), and the simultaneous suppression of V-Cu arising from the stabilization of Cu+ in the Zn-substituted CuI lattice, rather than hole compensation by the electrons generated from Zn2+ substitution into Cu+ sites. Our results show that the hole concentration of Zn-substituted CuI is tunable in the range of 1014-1018 cm-3, making it suitable for thin-film transistors and hole transport layers in OLEDs. | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.14, no.29, pp.33463 - 33471 | - |
dc.identifier.doi | 10.1021/acsami.2c03673 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.scopusid | 2-s2.0-85135216289 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/62044 | - |
dc.identifier.wosid | 000829567400001 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Hole Concentration Reduction in CuI by Zn Substitution and its Mechanism: Toward Device Applications | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics; Materials Science | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | copper iodide | - |
dc.subject.keywordAuthor | p-type semiconductors | - |
dc.subject.keywordAuthor | wide-gap materials | - |
dc.subject.keywordAuthor | carrier doping | - |
dc.subject.keywordAuthor | point defects | - |
dc.subject.keywordPlus | PROCESSED COPPER IODIDE | - |
dc.subject.keywordPlus | THIN-FILM DEPOSITION | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | CARRIER TRANSPORT | - |
dc.subject.keywordPlus | CU2O | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | CONDUCTIVITY | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | EFFICIENT | - |
dc.subject.keywordPlus | MOBILITY | - |
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