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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science


Air-stable van der Waals PtTe2 conductors with high current-carrying capacity and strong spin- orbit interaction

DC Field Value Language Song, Seunguk ko Oh, Inseon ko Jang, Sora ko Yoon, Aram ko Han, Juwon ko Lee, Zonghoon ko Yoo, Jung-Woo ko Kwon, Soon-Yong ko 2022-12-09T01:38:33Z - 2022-12-06 ko 2022-11 ko
dc.identifier.citation ISCIENCE, v.25, no.11, pp.105346 ko
dc.identifier.issn 2589-0042 ko
dc.identifier.uri -
dc.description.abstract High-performance van der Waals (vdW) integrated electronics and spintronics require reliable current-carrying capacity. However, it is challenging to achieve high current density and air-stable performance using vdW metals owing to the fast electrical breakdown triggered by defects or oxidation. Here, we report that spin-orbit interacted synthetic PtTe2 layers exhibit significant electrical reliability and robustness in ambient air. The 4-nm-thick PtTe2 synthesized at a low temperature (similar to 400 degrees C) shows intrinsic metallic transport behavior and a weak antilocalization effect attributed to the strong spin-orbit scattering. Remarkably, PtTe2 sustains a high current density approaching approximate to 31.5 MA cm(-2), which is the highest value among electrical interconnect candidates under oxygen exposure. Electrical failure is caused by the Joule heating of PtTe2 rather than defect-induced electromigration, which was achievable by the native TeOx passivation. The high-quality growth of PtTe2 and the investigation of its transport behaviors lay out essential foundations for the development of emerging vdW spin-orbitronics. ko
dc.language 영어 ko
dc.publisher CELL PRESS ko
dc.title Air-stable van der Waals PtTe2 conductors with high current-carrying capacity and strong spin- orbit interaction ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-85140986780 ko
dc.identifier.wosid 000882496400007 ko
dc.type.rims ART ko
dc.identifier.doi 10.1016/j.isci.2022.105346 ko
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