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DC Field | Value | Language |
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dc.citation.endPage | 44571 | - |
dc.citation.number | 39 | - |
dc.citation.startPage | 44561 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 14 | - |
dc.contributor.author | Kim, Minjae | - |
dc.contributor.author | Rehman, Malik Abdul | - |
dc.contributor.author | Lee, Donghyun | - |
dc.contributor.author | Wang, Yue | - |
dc.contributor.author | Lim, Dong-Hyeok | - |
dc.contributor.author | Khan, Muhammad Farooq | - |
dc.contributor.author | Choi, Haryeong | - |
dc.contributor.author | Shao, Qing Yi | - |
dc.contributor.author | Suh, Joonki | - |
dc.contributor.author | Lee, Hong-Sub | - |
dc.contributor.author | Park, Hyung-Ho | - |
dc.date.accessioned | 2023-12-21T13:40:27Z | - |
dc.date.available | 2023-12-21T13:40:27Z | - |
dc.date.created | 2022-10-21 | - |
dc.date.issued | 2022-09 | - |
dc.description.abstract | To implement artificial neural networks (ANNs) based on memristor devices, it is essential to secure the linearity and symmetry in weight update characteristics of the memristor, and reliability in the cycle-to-cycle and device-to-device variations. This study experimentally demonstrated and compared the filamentary and interface-type resistive switching (RS) behaviors of tantalum oxide (Ta2O5 and TaO2)-based devices grown by atomic layer deposition (ALD) to propose a suitable RS type in terms of reliability and weight update characteristics. Although Ta2O5 is a strong candidate for memristor, the filament-type RS behavior of Ta2O5 does not fit well with ANNs demanding analog memory characteristics. Therefore, this study newly designed an interface-type TaO2 memristor and compared it to a filament type of Ta2O5 memristor to secure the weight update characteristics and reliability. The TaO2-based interface-type memristor exhibited gradual RS characteristics and area dependency in both high-and low-resistance states. In addition, compared to the filamentary memristor, the RS behaviors of the TaO2-based interface-type device exhibited higher suitability for the neuromorphic, symmetric, and linear long-term potentiation (LTP) and long-term depression (LTD). These findings suggest better types of memristors for implementing ionic memristor-based ANNs among the two types of RS mechanisms. | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.14, no.39, pp.44561 - 44571 | - |
dc.identifier.doi | 10.1021/acsami.2c12296 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.scopusid | 2-s2.0-85139184733 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/59883 | - |
dc.identifier.wosid | 000862986300001 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Filamentary and Interface-Type Memristors Based on Tantalum Oxide for Energy-Efficient Neuromorphic Hardware | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics; Materials Science | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | memristor | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | interface type | - |
dc.subject.keywordAuthor | filament type | - |
dc.subject.keywordAuthor | neuromorphic hardware | - |
dc.subject.keywordPlus | LOW-POWER | - |
dc.subject.keywordPlus | NANOROD ARRAYS | - |
dc.subject.keywordPlus | CHANGE MEMORY | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | NONVOLATILE | - |
dc.subject.keywordPlus | RRAM | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | SYNAPSE | - |
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