Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.number | 5 | - |
dc.citation.startPage | eabm5236 | - |
dc.citation.title | SCIENCE ADVANCES | - |
dc.citation.volume | 8 | - |
dc.contributor.author | Lee, Hyeongwoo | - |
dc.contributor.author | Koo, Yeonjeong | - |
dc.contributor.author | Choi, Jinseong | - |
dc.contributor.author | Kumar, Shailabh | - |
dc.contributor.author | Lee, Hyoung-Taek | - |
dc.contributor.author | Ji, Gangseon | - |
dc.contributor.author | Choi, Soo Ho | - |
dc.contributor.author | Kang, Mingu | - |
dc.contributor.author | Kim, Ki Kang | - |
dc.contributor.author | Park, Hyeong‐Ryeol | - |
dc.contributor.author | Choo, Hyuck | - |
dc.contributor.author | Park, Kyoung-Duck | - |
dc.date.accessioned | 2023-12-21T14:37:26Z | - |
dc.date.available | 2023-12-21T14:37:26Z | - |
dc.date.created | 2022-09-30 | - |
dc.date.issued | 2022-02 | - |
dc.description.abstract | Understanding and controlling the nanoscale transport of excitonic quasiparticles in atomically thin two-dimensional (2D) semiconductors are crucial to produce highly efficient nano-excitonic devices. Here, we present a nanogap device to selectively confine excitons or trions of 2D transition metal dichalcogenides at the nanoscale, facilitated by the drift-dominant exciton funneling into the strain-induced local spot. We investigate the spatiospectral characteristics of the funneled excitons in a WSe2 monolayer (ML) and converted trions in a MoS2 ML using hyperspectral tip-enhanced photoluminescence imaging with <15-nm spatial resolution. In addition, we dynamically control the exciton funneling and trion conversion rate by the gigapascal-scale tip pressure engineering. Through a drift-diffusion model, we confirm an exciton funneling efficiency of similar to 25% with a significantly low strain threshold (similar to 0.1%), which sufficiently exceeds the efficiency of similar to 3% in previous studies. This work provides a previously unexplored strategy to facilitate efficient exciton transport and trion conversion of 2D semiconductor devices. | - |
dc.identifier.bibliographicCitation | SCIENCE ADVANCES, v.8, no.5, pp.eabm5236 | - |
dc.identifier.doi | 10.1126/sciadv.abm5236 | - |
dc.identifier.issn | 2375-2548 | - |
dc.identifier.scopusid | 2-s2.0-85124173596 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/59595 | - |
dc.identifier.wosid | 000799992000019 | - |
dc.language | 영어 | - |
dc.publisher | American Association for the Advancement of Science | - |
dc.title | Drift-dominant exciton funneling and trion conversion in 2D semiconductors on the nanogap | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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