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DC Field | Value | Language |
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dc.citation.endPage | 66 | - |
dc.citation.startPage | 61 | - |
dc.citation.title | NATURE | - |
dc.citation.volume | 610 | - |
dc.contributor.author | Wang, Yan | - |
dc.contributor.author | Kim, Jong Chan | - |
dc.contributor.author | Li, Yang | - |
dc.contributor.author | Ma, Kyung Yeol | - |
dc.contributor.author | Hong, Seokmo | - |
dc.contributor.author | Kim, Minsu | - |
dc.contributor.author | Shin, Hyeon Suk | - |
dc.contributor.author | Jeong, Hu Young | - |
dc.contributor.author | Chhowalla, Manish | - |
dc.date.accessioned | 2023-12-21T13:44:57Z | - |
dc.date.available | 2023-12-21T13:44:57Z | - |
dc.date.created | 2022-09-30 | - |
dc.date.issued | 2022-08 | - |
dc.description.abstract | Digital logic circuits are based on complementary pairs of n- and p-type field effect transistors (FETs) via complementary metal oxide semiconductor technology. In three-dimensional (3D) or bulk semiconductors, substitutional doping of acceptor or donor impurities is used to achieve p- and n-type FETs. However, the controllable p-type doping of low-dimensional semiconductors such astwo-dimensional (2D) transition-metal dichalcogenides (TMDs) has proved to be challenging. Although it is possible to achieve high-quality, low-resistance n-type van der Waals (vdW) contacts on 2D TMDs(1-)(5), obtaining p-type devices by evaporating high-work-function metals onto 2D TMDs has not been realized so far. Here we report high-performance p-type devices on single- and few-layered molybdenum disulfide and tungsten diselenide based on industry-compatible electron beam evaporation of high-work-function metals such as palladium and platinum. Using atomic resolution imaging and spectroscopy, we demonstrate near-ideal vdW interfaces without chemical interactions between the 2D TMDs and 3D metals. Electronic-transport measurements reveal that the Fermi level is unpinned and p-type FETs based on vdW contacts exhibit low contact resistance of 3.3 k Omega mu m, high mobility values of approximately 190 cm(2) V(-1)s(-1) at room temperature, saturation currents in excess of 10(-5) A mu m(-1) and an on/off ratio of 10(7). We also demonstrate an ultra-thin photovoltaic cell based on n- and p-type vdW contacts with an open circuit voltage of 0.6 V and a power conversion efficiency of 0.82%. | - |
dc.identifier.bibliographicCitation | NATURE, v.610, pp.61 - 66 | - |
dc.identifier.doi | 10.1038/s41586-022-05134-w | - |
dc.identifier.issn | 0028-0836 | - |
dc.identifier.scopusid | 2-s2.0-85138227045 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/59590 | - |
dc.identifier.wosid | 000857858900001 | - |
dc.language | 영어 | - |
dc.publisher | NATURE PORTFOLIO | - |
dc.title | P-type electrical contacts for 2D transition-metal dichalcogenides | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | WSE2 | - |
dc.subject.keywordPlus | GROWTH | - |
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