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DC Field | Value | Language |
---|---|---|
dc.citation.number | 44 | - |
dc.citation.startPage | 2205695 | - |
dc.citation.title | ADVANCED FUNCTIONAL MATERIALS | - |
dc.citation.volume | 32 | - |
dc.contributor.author | Seo, Jihyung | - |
dc.contributor.author | Kim, Jiha | - |
dc.contributor.author | Lee, Junghyun | - |
dc.contributor.author | Koo, Donghwan | - |
dc.contributor.author | Jeong, Gyujeong | - |
dc.contributor.author | Choi, Yunseong | - |
dc.contributor.author | Son, Eun bin | - |
dc.contributor.author | Park, Hyesung | - |
dc.date.accessioned | 2023-12-21T13:38:28Z | - |
dc.date.available | 2023-12-21T13:38:28Z | - |
dc.date.created | 2022-09-08 | - |
dc.date.issued | 2022-10 | - |
dc.description.abstract | 2D semiconductors have attracted considerable interest in the quest to overcome some of the challenges associated with 3D bulk semiconductors. The application of 2D semiconductors in transistor-based electronic devices requires a reliable patterning technology with thickness controllability for continued transistor scaling. In this study, a facile synthesis approach is developed that allows direct patterning of transition metal dichalcogenides (TMDs) with thickness controllability at the wafer scale through intergranular diffusion-assisted liquid-phase chemical vapor deposition using a sacrificial metal layer. By depositing a liquid-phase transition metal precursor onto the pre-patterned polycrystalline Ni/SiO2 substrate, a directly patterned transition metal layer can be formed on SiO2 via intergranular diffusion through the Ni grain boundaries, enabling the growth of patternable TMDs with a controllable thickness. The as-synthesized directly patterned WS2 transistor exhibits typical n-type transport behavior with a stable photoswitching performance. The proposed patterning technique can make the application of 2D semiconductors in advanced electronic devices more viable. | - |
dc.identifier.bibliographicCitation | ADVANCED FUNCTIONAL MATERIALS, v.32, no.44, pp.2205695 | - |
dc.identifier.doi | 10.1002/adfm.202205695 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.scopusid | 2-s2.0-85136830477 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/59278 | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/adfm.202205695 | - |
dc.identifier.wosid | 000843771600001 | - |
dc.language | 영어 | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Intergranular Diffusion-Assisted Liquid-Phase Chemical Vapor Deposition for Wafer-Scale Synthesis of Patternable 2D Semiconductors | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | patternable 2D semiconductors | - |
dc.subject.keywordAuthor | thickness controllability | - |
dc.subject.keywordAuthor | transition metal dichalcogenides | - |
dc.subject.keywordAuthor | wafer-scale electronics | - |
dc.subject.keywordAuthor | chemical vapor deposition | - |
dc.subject.keywordAuthor | direct patterning | - |
dc.subject.keywordAuthor | intergranular diffusion | - |
dc.subject.keywordPlus | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject.keywordPlus | LARGE-AREA SYNTHESIS | - |
dc.subject.keywordPlus | MONOLAYER WS2 | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | FILMS | - |
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