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DC Field | Value | Language |
---|---|---|
dc.citation.number | 7 | - |
dc.citation.startPage | 2100141 | - |
dc.citation.title | ADVANCED MATERIALS TECHNOLOGIES | - |
dc.citation.volume | 6 | - |
dc.contributor.author | Kim, Woojo | - |
dc.contributor.author | Kwon, Jimin | - |
dc.contributor.author | Takeda, Yasunori | - |
dc.contributor.author | Sekine, Tomohito | - |
dc.contributor.author | Tokito, Shizuo | - |
dc.contributor.author | Jung, Sungjune | - |
dc.date.accessioned | 2023-12-21T15:37:46Z | - |
dc.date.available | 2023-12-21T15:37:46Z | - |
dc.date.created | 2022-08-29 | - |
dc.date.issued | 2021-07 | - |
dc.description.abstract | In this study, printed organic nonvolatile memory thin-film transistors (TFTs) with phase-separated tunneling layer is presented. Finely patterned electrodes are fabricated by reverse-offset printing with 15 mu m line width and 10 mu m channel length. Memory devices are configured in a bottom-gate bottom-contact TFT structure with a high-k gate blocking insulator poly(vinylidene fluoride-co-trifluoroethylene). A blended ink, which consisted of a small-molecule p-type organic semiconductor dithieno[2,3-d;2 ',3 '-d ']benzo[1,2-b;4,5-b ']dithiophene and a polystyrene dielectric, is fabricated using air-pulse nozzle printing. The tunneling layer is formed during the active layer printing process with the blended ink by phase separation of small-molecule and polymer. The printed memory TFTs with the phase-separated tunneling layer exhibit significantly improved V-TH shifts (approximate to 3 times), programmed/erased current ratio (>10(3) A A(-1)), switching speed (<100 ms), and estimated data retention (>10 years). This memory device can be applied to wearable electronics, smart Internet-of-Things devices, and neuromorphic computing devices. | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS TECHNOLOGIES, v.6, no.7, pp.2100141 | - |
dc.identifier.doi | 10.1002/admt.202100141 | - |
dc.identifier.issn | 2365-709X | - |
dc.identifier.scopusid | 2-s2.0-85105754700 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/59181 | - |
dc.identifier.wosid | 000650225900001 | - |
dc.language | 영어 | - |
dc.publisher | WILEY | - |
dc.title | Flexible and Printed Organic Nonvolatile Memory Transistor with Bilayer Polymer Dielectrics | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | charge trapping | - |
dc.subject.keywordAuthor | nonvolatile memory transistor | - |
dc.subject.keywordAuthor | polymeric electret | - |
dc.subject.keywordAuthor | printed electronics | - |
dc.subject.keywordAuthor | reverse offset printing | - |
dc.subject.keywordPlus | FLASH MEMORY | - |
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