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김성진

Kim, Seong-Jin
Bio-inspired Advanced Sensors Lab.
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dc.citation.endPage 2918 -
dc.citation.number 10 -
dc.citation.startPage 2909 -
dc.citation.title IEEE JOURNAL OF SOLID-STATE CIRCUITS -
dc.citation.volume 57 -
dc.contributor.author Park, Jee-Ho -
dc.contributor.author Hwang, Jung-Hye -
dc.contributor.author Shin, Changyong -
dc.contributor.author Kim, Seong-Jin -
dc.date.accessioned 2023-12-21T13:38:46Z -
dc.date.available 2023-12-21T13:38:46Z -
dc.date.created 2022-08-03 -
dc.date.issued 2022-10 -
dc.description.abstract This article presents a bipolar junction transistor (BJT)-based CMOS temperature-to-frequency converter (TFC). A relaxation oscillator (ROSC) consisting of an integrating capacitor, a current source, and a comparator converts the ratio of the complementary-to-absolute-temperature (CTAT) voltage to the proportional-to-absolute-temperature (PTAT) voltage created by the BJT core to frequency. To improve the temperature accuracy, we incorporate a capacitor flipping technique to remove an offset of the comparator and a settling time error when resetting the integrating capacitor. Moreover, bootstrapped NMOS switches with the triple well structure are implemented to suppress leakage current and prevent from forming parasitic BJTs when the negative CTAT is applied to them by the proposed flipping technique. The prototype fabricated in a 0.11-mu m CMOS process consumes 3.1-mu W power and occupies a 0.025-mm(2) active area. Measurements of 18 samples with the digital trimming show an inaccuracy of +/- 1 degrees C (3 sigma) from -40 degrees C to 140 degrees C. The area- and energy-efficient TFC is applicable to monitor the temperature inside integrated chips. -
dc.identifier.bibliographicCitation IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.57, no.10, pp.2909 - 2918 -
dc.identifier.doi 10.1109/JSSC.2022.3182708 -
dc.identifier.issn 0018-9200 -
dc.identifier.scopusid 2-s2.0-85133698264 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/59076 -
dc.identifier.url https://ieeexplore.ieee.org/document/9801842 -
dc.identifier.wosid 000826431200001 -
dc.language 영어 -
dc.publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC -
dc.title A BJT-Based Temperature-to-Frequency Converter With +/- 1 degrees C (3 sigma) Inaccuracy From-40 degrees C to 140 degrees C for On-Chip Thermal Monitoring -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Engineering, Electrical & Electronic -
dc.relation.journalResearchArea Engineering -
dc.type.docType Article; Early Access -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor Bipolar junction transistor (BJT) -
dc.subject.keywordAuthor CMOS temperature sensor -
dc.subject.keywordAuthor flipping technique -
dc.subject.keywordAuthor low power consumption -
dc.subject.keywordAuthor relaxation oscillator (ROSC) -
dc.subject.keywordAuthor small active area -
dc.subject.keywordAuthor temperature-to-frequency converter (TFC) -
dc.subject.keywordPlus SENSOR -
dc.subject.keywordPlus +/-0.5-DEGREES-C -
dc.subject.keywordPlus -55-DEGREES-C -

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