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DC Field | Value | Language |
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dc.citation.endPage | 8859 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 8851 | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 16 | - |
dc.contributor.author | Baidoo, Joseph Kojo | - |
dc.contributor.author | Choi, Soo Ho | - |
dc.contributor.author | Agyapong-Fordjour, Frederick Osei-Tutu | - |
dc.contributor.author | Boandoh, Stephen | - |
dc.contributor.author | Yun, Seok Joon | - |
dc.contributor.author | Adofo, Laud Anim | - |
dc.contributor.author | Ben-Smith, Andrew | - |
dc.contributor.author | Kim, Yong In | - |
dc.contributor.author | Jin, Jeong Won | - |
dc.contributor.author | Jung, Min-Hyoung | - |
dc.contributor.author | Jeong, Hu Young | - |
dc.contributor.author | Kim, Young-Min | - |
dc.contributor.author | Lee, Young Hee | - |
dc.contributor.author | Kim, Soo Min | - |
dc.contributor.author | Kim, Ki Kang | - |
dc.date.accessioned | 2023-12-21T14:07:49Z | - |
dc.date.available | 2023-12-21T14:07:49Z | - |
dc.date.created | 2022-07-21 | - |
dc.date.issued | 2022-06 | - |
dc.description.abstract | Vertical van der Waals heterostructures (vdWhs), which are made by layer-by-layer stacking of two-dimensional (2D) materials, offer great opportunities for the development of extraordinary physics and devices such as topological superpair condensation, Coulomb drag, and tunneling devices. However, the size of vdWhs is still limited to the order of a few micrometers, which restricts the large-scale roll-to-roll processes for industrial applications. Herein, we report the sequential growth of a 14 in. vertical vdWhs on a rollable Al foil via chemical vapor deposition. By supplying chalcogen precursors to liquid transition-metal precursor-coated Al foils, we grew a wide range of individual 2D transition-metal dichalcogenide (TMD) films, including MoS2, VS2, ReS2, WS2, SnS2, WSe2, and vanadium-doped MoS2. Additionally, by repeating the growth process, we successfully achieved the layer-by-layer growth of ReS2/MoS2 and SnS2/ReS2/MoS2 vdWhs. The chemically inert Al native oxide layer inhibits the diffusion of chalcogen and metal atoms into Al foils, allowing for the growth of diverse TMDs and their vdWhs. The conductive Al substrate enables the effective use of vdWhs/Al as a hydrogen evolution reaction electrocatalyst with a transfer-free process. This work provides a robust route for the commercialization of 2D TMDs and their vdWhs at a low cost. | - |
dc.identifier.bibliographicCitation | ACS NANO, v.16, no.6, pp.8851 - 8859 | - |
dc.identifier.doi | 10.1021/acsnano.1c10233 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.scopusid | 2-s2.0-85133963881 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/58982 | - |
dc.identifier.wosid | 000820326500001 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Sequential Growth of Vertical Transition- Metal Dichalcogenide Heterostructures on Rollable Aluminum Foil | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | van der Waals heterostructure | - |
dc.subject.keywordAuthor | diffusion barrier | - |
dc.subject.keywordAuthor | aluminum foil | - |
dc.subject.keywordAuthor | transition-metal dichalcogenides | - |
dc.subject.keywordAuthor | chemical vapor deposition | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | SULFIDE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | SNS2 | - |
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