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Suh, Joonki
Semiconductor Nanotechnology Lab.
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dc.citation.endPage 9659 -
dc.citation.number 6 -
dc.citation.startPage 9651 -
dc.citation.title ACS NANO -
dc.citation.volume 16 - Kim, Gwangwoo - Kim, Hyong Min - Kumar, Pawan - Rahaman, Mahfujur - Stevens, Christopher E. - Jeon, Jonghyuk - Jo, Kiyoung - Kim, Kwan-Ho - Trainor, Nicholas - Zhu, Haoyue - Sohn, Byeong-Hyeok - Stach, Eric A. - Hendrickson, Joshua R. - Glavin, Nicholas R. - Suh, Joonki - Redwing, Joan M. - Jariwala, Deep - 2023-12-21T14:07:55Z - 2023-12-21T14:07:55Z - 2022-07-14 - 2022-06 -
dc.description.abstract Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect-and strain-induced single-photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained 2D semiconductors are far from being understood. Here, we demonstrate a bottom-up, scalable, and lithography-free approach for creating large areas of localized emitters with high density (similar to 150 emitters/um(2)) in a WSe2 monolayer. We induce strain inside the WSe2 monolayer with high spatial density by conformally placing the WS(e)2 monolayer over a uniform array of Pt nanoparticles with a size of 10 nm. Cryogenic, time-resolved, and gate-tunable luminescence measurements combined with near-field luminescence spectroscopy suggest the formation of localized states in strained regions that emit single photons with a high spatial density. Our approach of using a metal nanoparticle array to generate a high density of strained quantum emitters will be applied to scalable, tunable, and versatile quantum light sources. -
dc.identifier.bibliographicCitation ACS NANO, v.16, no.6, pp.9651 - 9659 -
dc.identifier.doi 10.1021/acsnano.2c02974 -
dc.identifier.issn 1936-0851 -
dc.identifier.scopusid 2-s2.0-85131748262 -
dc.identifier.uri -
dc.identifier.wosid 000818979700001 -
dc.language 영어 -
dc.publisher AMER CHEMICAL SOC -
dc.title High-Density, Localized Quantum Emitters in Strained 2D Semiconductors -
dc.type Article -
dc.description.isOpenAccess TRUE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary -
dc.relation.journalResearchArea Chemistry; Science & Technology - Other Topics; Materials Science -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor transition metal dichalcogenides -
dc.subject.keywordAuthor tungsten diselenide -
dc.subject.keywordAuthor strain engineering -
dc.subject.keywordAuthor platinum nanoparticles -
dc.subject.keywordAuthor quantum emitter -
dc.subject.keywordPlus SINGLE-PHOTON EMISSION -
dc.subject.keywordPlus ROOM-TEMPERATURE -
dc.subject.keywordPlus WSE2 MONOLAYERS -
dc.subject.keywordPlus DARK EXCITONS -
dc.subject.keywordPlus DOTS -
dc.subject.keywordPlus GRAPHENE -
dc.subject.keywordPlus DEFECTS -
dc.subject.keywordPlus WIRES -


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