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Lee, Jae Sung
Eco-friendly Catalysis and Energy Lab
Research Interests
  • Photocatalytic water splitting, artificial photosynthesis, fuel cells, heterogeneous catalysis

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Healing Ion-Implanted Semiconductors by Hybrid Microwave Annealing: Activation of Nitrogen-Implanted TiO<sub>2</sub>

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dc.contributor.author Zhang, Hemin ko
dc.contributor.author Ahn, Chang Won ko
dc.contributor.author Park, Jin Yong ko
dc.contributor.author Ok, Jung-Woo ko
dc.contributor.author Sung, Ji Yeong ko
dc.contributor.author Jin, Jong Sung ko
dc.contributor.author Kim, Hyun Gyu ko
dc.contributor.author Lee, Jae Sung ko
dc.date.available 2022-06-24T04:35:13Z -
dc.date.created 2022-06-14 ko
dc.date.issued 2022-05 ko
dc.identifier.citation JOURNAL OF PHYSICAL CHEMISTRY LETTERS, v.13, no.17, pp.3878 - 3885 ko
dc.identifier.issn 1948-7185 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/58690 -
dc.description.abstract In order to recover the damaged structure of a nitrogen-implanted TiO2 photoanode, hybrid microwave annealing (HMA) is proposed as an alternative postannealing process instead of conventional thermal annealing (CTA). Compared to CTA, HMA provides distinctive advantages: (i) facile transformation of the interstitial N-N states into substitutional N-Ti states, (ii) better preservation of the ion-implanted nitrogen in TiO2, and (iii) effective alleviation of lattice strain and reconstruction of the broken bonds. As a result, the HMA-activated photoanode improves the photocurrent density by a factor of similar to 3.2 from 0.29 to 0.93 mA cm(-2 )at 1.23 V-RHE and the incident photon-to-current conversion efficiency (IPCE) from similar to 2.9% to similar to 10.5% at 430 nm relative to those of the as-prepared N-I-TiO2 photoanode in photoelectrochemical water oxidation, which are much better than those of the CTA-activated photoanode (0.58 mA cm(-2) at 1.23 V-RHE and IPCE of 5.7% at 430 nm), especially in the visible light region &gt;= 420 nm). ko
dc.language 영어 ko
dc.publisher AMER CHEMICAL SOC ko
dc.title Healing Ion-Implanted Semiconductors by Hybrid Microwave Annealing: Activation of Nitrogen-Implanted TiO&lt;sub&gt;2&lt;/sub&gt; ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-85129299777 ko
dc.identifier.wosid 000799352500015 ko
dc.type.rims ART ko
dc.identifier.doi 10.1021/acs.jpclett.2c00220 ko
dc.identifier.url https://pubs.acs.org/doi/10.1021/acs.jpclett.2c00220 ko
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