Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.number | 1 | - |
dc.citation.startPage | 1773 | - |
dc.citation.title | NATURE COMMUNICATIONS | - |
dc.citation.volume | 13 | - |
dc.contributor.author | Li, Xin | - |
dc.contributor.author | Wu, Guilin | - |
dc.contributor.author | Zhang, Leining | - |
dc.contributor.author | Huang, Deping | - |
dc.contributor.author | Li, Yunqing | - |
dc.contributor.author | Zhang, Ruiqi | - |
dc.contributor.author | Li, Meng | - |
dc.contributor.author | Zhu, Lin | - |
dc.contributor.author | Guo, Jing | - |
dc.contributor.author | Huang, Tianlin | - |
dc.contributor.author | Shen, Jun | - |
dc.contributor.author | Wei, Xingzhan | - |
dc.contributor.author | Yu, Ka Man | - |
dc.contributor.author | Dong, Jichen | - |
dc.contributor.author | Altman, Michael S. | - |
dc.contributor.author | Ruoff, Rodney S. | - |
dc.contributor.author | Duan, Yinwu | - |
dc.contributor.author | Yu, Jie | - |
dc.contributor.author | Wang, Zhujun | - |
dc.contributor.author | Huang, Xiaoxu | - |
dc.contributor.author | Ding, Feng | - |
dc.contributor.author | Shi, Haofei | - |
dc.contributor.author | Tang, Wenxin | - |
dc.date.accessioned | 2023-12-21T14:16:18Z | - |
dc.date.available | 2023-12-21T14:16:18Z | - |
dc.date.created | 2022-05-03 | - |
dc.date.issued | 2022-04 | - |
dc.description.abstract | The use of single-crystal substrates as templates for the epitaxial growth of single-crystal overlayers has been a primary principle of materials epitaxy for more than 70 years. Here we report our finding that, though counterintuitive, single-crystal 2D materials can be epitaxially grown on twinned crystals. By establishing a geometric principle to describe 2D materials alignment on high-index surfaces, we show that 2D material islands grown on the two sides of a twin boundary can be well aligned. To validate this prediction, wafer-scale Cu foils with abundant twin boundaries were synthesized, and on the surfaces of these polycrystalline Cu foils, we have successfully grown wafer-scale single-crystal graphene and hexagonal boron nitride films. In addition, to greatly increasing the availability of large area high-quality 2D single crystals, our discovery also extends the fundamental understanding of materials epitaxy. The heteroepitaxial growth of crystalline 2D materials is usually based on single-crystal substrates. Here, the authors demonstrate that single-crystal graphene and hexagonal boron nitride films can be successfully grown on wafer-scale copper foils with tailored twin boundaries. | - |
dc.identifier.bibliographicCitation | NATURE COMMUNICATIONS, v.13, no.1, pp.1773 | - |
dc.identifier.doi | 10.1038/s41467-022-29451-w | - |
dc.identifier.issn | 2041-1723 | - |
dc.identifier.scopusid | 2-s2.0-85127373219 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/58656 | - |
dc.identifier.url | https://www.nature.com/articles/s41467-022-29451-w | - |
dc.identifier.wosid | 000777408600013 | - |
dc.language | 영어 | - |
dc.publisher | NATURE PORTFOLIO | - |
dc.title | Single-crystal two-dimensional material epitaxy on tailored non-single-crystal substrates | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | https://www.nature.com/articles/s41467-022-29451-w | - |
dc.subject.keywordPlus | DEPOSITION GRAPHENE GROWTH | - |
dc.subject.keywordPlus | WAFER-SCALE GROWTH | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | MOLECULAR-DYNAMICS | - |
dc.subject.keywordPlus | ORIENTATION | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | RECRYSTALLIZATION | - |
dc.subject.keywordPlus | DOMAINS | - |
dc.subject.keywordPlus | METALS | - |
dc.subject.keywordPlus | FILMS | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.