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- Jeong, Changwook
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | US | - |
| dc.citation.conferencePlace | Honolulu, HI, USA | - |
| dc.citation.title | 2006 Symposium on VLSI Technology | - |
| dc.contributor.author | Song, Y.J. | - |
| dc.contributor.author | Ryoo, K.C | - |
| dc.contributor.author | Hwang, Y.N. | - |
| dc.contributor.author | Jeong, Changwook | - |
| dc.contributor.author | Lim, D.W. | - |
| dc.contributor.author | Park, S.S. | - |
| dc.contributor.author | Kim, J.I. | - |
| dc.contributor.author | Kim, J.H. | - |
| dc.contributor.author | Lee, S.Y. | - |
| dc.contributor.author | Kong, J. | - |
| dc.contributor.author | Ahn, S. | - |
| dc.contributor.author | Lee, S.H. | - |
| dc.contributor.author | Park, J.H. | - |
| dc.contributor.author | Oh, J.H. | - |
| dc.contributor.author | Oh, Y.T. | - |
| dc.contributor.author | Kim, J.S. | - |
| dc.contributor.author | Shin, J. | - |
| dc.contributor.author | Park, J. | - |
| dc.contributor.author | Fai, Y. | - |
| dc.contributor.author | Koh, G. | - |
| dc.contributor.author | Jeong, G.T. | - |
| dc.contributor.author | Kim, R.H. | - |
| dc.contributor.author | Lim, H.S. | - |
| dc.contributor.author | Park, I.S. | - |
| dc.contributor.author | Jeong, H.S. | - |
| dc.contributor.author | Jeong, H. | - |
| dc.contributor.author | Kim, K. | - |
| dc.date.accessioned | 2023-12-20T05:08:44Z | - |
| dc.date.available | 2023-12-20T05:08:44Z | - |
| dc.date.created | 2022-04-11 | - |
| dc.date.issued | 2006-06-13 | - |
| dc.description.abstract | Advanced ring type technology and encapsulating scheme were developed to fabricate highly manufacturable and reliable 256Mb PRAM. Very uniform BEC area was prepared by the advanced ring type technology in which core dielectrics were optimized for cell contact CMP process. In addition, relatively high set resistance was stabilized from encapsulating Gb2Sb2Te 5 (GST) stack with blocking layers, thus giving rise to a wide sensing window. These advanced ring type and encapsulating technologies can provide great potentials of developing high density 512Mb PRAM and beyond. | - |
| dc.identifier.bibliographicCitation | 2006 Symposium on VLSI Technology | - |
| dc.identifier.doi | 10.1109/vlsit.2006.1705245 | - |
| dc.identifier.scopusid | 2-s2.0-39549112173 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/58533 | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE | - |
| dc.title | Highly Reliable 256Mb PRAM with Advanced Ring Contact Technology and Novel Encapsulating Technology | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2006-06-13 | - |
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