File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Jeong, Changwook
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | US | - |
| dc.citation.conferencePlace | San Francisco, CA | - |
| dc.citation.title | 2006 International Electron Devices Meeting | - |
| dc.contributor.author | Oh, J. H. | - |
| dc.contributor.author | Park, J. H. | - |
| dc.contributor.author | Lim, Y. S. | - |
| dc.contributor.author | Lim, H. S. | - |
| dc.contributor.author | Oh, Y. T. | - |
| dc.contributor.author | Kim, J. S. | - |
| dc.contributor.author | Shin, J. M. | - |
| dc.contributor.author | Song, Y. J. | - |
| dc.contributor.author | Ryoo, K. C. | - |
| dc.contributor.author | Lim, D. W. | - |
| dc.contributor.author | Park, S. S. | - |
| dc.contributor.author | Kim, J. I. | - |
| dc.contributor.author | Kim, J. H. | - |
| dc.contributor.author | Yu, J. | - |
| dc.contributor.author | Yeung, F. | - |
| dc.contributor.author | Jeong, Changwook | - |
| dc.contributor.author | Kong, J. H. | - |
| dc.contributor.author | Kang, D. H. | - |
| dc.contributor.author | Koh, G. H. | - |
| dc.contributor.author | Jeong, G. T. | - |
| dc.contributor.author | Jeong, H. S. | - |
| dc.contributor.author | Kim, Kinam | - |
| dc.date.accessioned | 2023-12-20T05:07:05Z | - |
| dc.date.available | 2023-12-20T05:07:05Z | - |
| dc.date.created | 2022-04-07 | - |
| dc.date.issued | 2006-12-13 | - |
| dc.description.abstract | Fully functional 512Mb PRAM with 0.047μm2 (5.8F2) cell size was successfully fabricated using 90nm diode technology in which we developed novel process schemes such as vertical diode as cell switch, self-aligned bottom electrode contact scheme, and line-type Ge 2Sb2Te5. The 512Mb PRAM showed excellent electrical properties of sufficiently large on-current and stable phase transition behavior. The reliability of the 512Mb chip was also evaluated as a write-endurance over 1E5 cycles and a data retention time over 10 years at 85°C. | - |
| dc.identifier.bibliographicCitation | 2006 International Electron Devices Meeting | - |
| dc.identifier.doi | 10.1109/IEDM.2006.346905 | - |
| dc.identifier.scopusid | 2-s2.0-46049090421 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/58531 | - |
| dc.language | 영어 | - |
| dc.publisher | IEDM | - |
| dc.title | Full integration of highly manufacturable 512Mb PRAM based on 90nm technology | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2006-12-10 | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.