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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 1193 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1191 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 35 | - |
dc.contributor.author | Shin, Donggwan | - |
dc.contributor.author | Jeong, Changwook | - |
dc.contributor.author | Jeon, Jongwook | - |
dc.contributor.author | Chung, Ilsub | - |
dc.date.accessioned | 2023-12-22T01:46:00Z | - |
dc.date.available | 2023-12-22T01:46:00Z | - |
dc.date.created | 2022-04-01 | - |
dc.date.issued | 2014-12 | - |
dc.description.abstract | Investigating of ON-current boosting, short channel effect (SCE), and self-heating effect in Si pFinFET on a SiC stress relaxed buffer (SRB) layer is presented compared with SiGe pFinFET on a SiGe-SRB. Both SiC-SRB-based device and SiGe-SRB-based device show mobility boosting due to high compressive channel stress as well as enhanced SCE due to significant suppressing of subfin leakage. However, if self-heating is considered, SiGe-based devices exhibit non-negligible current degradation compared to SiC-SRB-based devices. Even though SiGe channel devices on a SiGe-SRB show better performance compared with SiC-SRB-based device, it is shown that the impact of BEOL reliability should be considered carefully. | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.35, no.12, pp.1191 - 1193 | - |
dc.identifier.doi | 10.1109/LED.2014.2364859 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.scopusid | 2-s2.0-84913556299 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/58469 | - |
dc.identifier.wosid | 000345575400010 | - |
dc.language | 영어 | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Highly Strained Si pFinFET on SiC With Good Control of Sub-Fin Leakage and Self-Heating | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalResearchArea | Engineering | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | FinFET | - |
dc.subject.keywordAuthor | SiC | - |
dc.subject.keywordAuthor | SiGe | - |
dc.subject.keywordAuthor | strain relaxed buffer (SRB) | - |
dc.subject.keywordAuthor | short channel effect (SCE) | - |
dc.subject.keywordAuthor | self-heating effect (SHE) | - |
dc.subject.keywordAuthor | reliability | - |
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