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Baek, Jong-Beom
Center for Dimension-Controllable Organic Frameworks
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dc.citation.number 2 -
dc.citation.startPage 023103 -
dc.citation.title APPLIED PHYSICS LETTERS -
dc.citation.volume 118 -
dc.contributor.author Yang, Zhenxing -
dc.contributor.author Mahmood, Javeed -
dc.contributor.author Niu, Shifeng -
dc.contributor.author Tian, Hui -
dc.contributor.author Ji, Tingting -
dc.contributor.author Liu, Cailong -
dc.contributor.author Baek, Jong-Beom -
dc.contributor.author Sundqvist, Bertil -
dc.contributor.author Yao, Mingguang -
dc.contributor.author Liu, Bingbing -
dc.date.accessioned 2023-12-21T16:20:09Z -
dc.date.available 2023-12-21T16:20:09Z -
dc.date.created 2022-01-01 -
dc.date.issued 2021-01 -
dc.description.abstract Graphitic carbon nitride (C2N and C3N) with various pi electron distributions on layers have been studied under pressure through a combined theoretical and experimental approach and a comparison with graphite. It is found that as these materials transform into low compressibility phases in the pressure range from 15 to 45GPa, strong electrostatic repulsion between pi electrons and in-plane sp(2) electrons may distort and soften the sp(2) bonds, leading to anomalous pressure evolutions of the intralayer phonon vibrations, such as a plateau-like behavior of E-2g mode (G-band) in C2N and C3N. This also causes a slow increase in the resistivity/resistance of C2N and C3N as pressure increases, and the gradual interlayer bonding leads to an abrupt increase in resistance of the materials but with different pressure responses due to their different pi electron distributions. Moreover, the intensity enhancement of the G band in both CN materials may be related to their electronic structure changes. The results deepen our understanding of the effects of pi electron distribution on the structural transition of graphitic materials and may explain some unexplained in previous studies. -
dc.identifier.bibliographicCitation APPLIED PHYSICS LETTERS, v.118, no.2, pp.023103 -
dc.identifier.doi 10.1063/5.0038445 -
dc.identifier.issn 0003-6951 -
dc.identifier.scopusid 2-s2.0-85099523458 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/55941 -
dc.identifier.url https://aip.scitation.org/doi/10.1063/5.0038445 -
dc.identifier.wosid 000611040100001 -
dc.language 영어 -
dc.publisher AMER INST PHYSICS -
dc.title Anomalous phonon softening of G-band in compressed graphitic carbon nitride due to strong electrostatic repulsion -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Physics, Applied -
dc.relation.journalResearchArea Physics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus HIGH-PRESSURE -
dc.subject.keywordPlus BORON-NITRIDE -
dc.subject.keywordPlus NANOTUBES -

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