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Park, Kibog
Emergent Materials & Devices Lab.
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dc.citation.number 1 -
dc.citation.startPage 90 -
dc.citation.title NPJ 2D MATERIALS AND APPLICATIONS -
dc.citation.volume 5 -
dc.contributor.author Jung, Sungchul -
dc.contributor.author Park, Jinyoung -
dc.contributor.author Kim, Junhyung -
dc.contributor.author Song, Wonho -
dc.contributor.author Jo, Jaehyeong -
dc.contributor.author Park, Hyunjae -
dc.contributor.author Kong, Myong -
dc.contributor.author Kang, Seokhyeong -
dc.contributor.author Sheeraz, Muhammad -
dc.contributor.author Kim, Ill Won -
dc.contributor.author Kim, Tae Heon -
dc.contributor.author Park, Kibog -
dc.date.accessioned 2023-12-21T14:51:29Z -
dc.date.available 2023-12-21T14:51:29Z -
dc.date.created 2021-12-09 -
dc.date.issued 2021-12 -
dc.description.abstract A new concept of read-out method for ferroelectric random-access memory (FeRAM) using a graphene layer as the channel material of bottom-gated field effect transistor structure is demonstrated experimentally. The transconductance of the graphene channel is found to change its sign depending on the direction of spontaneous polarization (SP) in the underlying ferroelectric layer. This indicates that the memory state of FeRAM, specified by the SP direction of the ferroelectric layer, can be sensed unambiguously with transconductance measurements. With the proposed read-out method, it is possible to construct an array of ferroelectric memory cells in the form of a cross-point structure where the transconductance of a crossing cell can be measured selectively without any additional selector. This type of FeRAM can be a plausible solution for fabricating high speed, ultra-low power, long lifetime, and high density 3D stackable non-volatile memory. -
dc.identifier.bibliographicCitation NPJ 2D MATERIALS AND APPLICATIONS, v.5, no.1, pp.90 -
dc.identifier.doi 10.1038/s41699-021-00272-7 -
dc.identifier.issn 2397-7132 -
dc.identifier.scopusid 2-s2.0-85120724220 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/55124 -
dc.identifier.url https://www.nature.com/articles/s41699-021-00272-7 -
dc.identifier.wosid 000725512900001 -
dc.language 영어 -
dc.publisher NATURE PORTFOLIO -
dc.title Self-selective ferroelectric memory realized with semimetalic graphene channel -
dc.type Article -
dc.description.isOpenAccess TRUE -
dc.relation.journalWebOfScienceCategory Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied -
dc.relation.journalResearchArea Science & Technology - Other Topics; Materials Science; Physics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus FILMS -

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