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Ding, Feng
IBS - Center for Multidimensional Carbon Materials (CMCM)
Research Interests
  • Theoretical methods development for materials studies.
  • The formation mechanism of various carbon materials, from fullerene to carbon nanotube and graphene.
  • Kinetics and thermodynamics of materials growth and etching.
  • The structure, properties and fundamentals of nanomaterials.
  • The experimental synthesis of carbon nanotubes.


Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire

DC Field Value Language Wang, Jinhuan ko Xu, Xiaozhi ko Cheng, Ting ko Gu, Lehua ko Qiao, Ruixi ko Liang, Zhihua ko Ding, Dongdong ko Hong, Hao ko Zheng, Peiming ko Zhang, Zhibin ko Zhang, Zhihong ko Zhang, Shuai ko Cui, Guoliang ko Chang, Chao ko Huang, Chen ko Qi, Jiajie ko Liang, Jing ko Liu, Can ko Zuo, Yonggang ko Xue, Guodong ko Fang, Xinjie ko Tian, Jinpeng ko Wu, Muhong ko Guo, Yi ko Yao, Zhixin ko Jiao, Qingze ko Liu, Lei ko Gao, Peng ko Li, Qunyang ko Yang, Rong ko Zhang, Guangyu ko Tang, Zhilie ko Yu, Dapeng ko Wang, Enge ko Lu, Jianming ko Zhao, Yun ko Wu, Shiwei ko Ding, Feng ko Liu, Kaihui ko 2021-11-25T08:08:40Z - 2021-11-17 ko 2022-01 ko
dc.identifier.citation NATURE NANOTECHNOLOGY, v.17, pp.33 - 38 ko
dc.identifier.issn 1748-3387 ko
dc.identifier.uri -
dc.description.abstract The growth of wafer-scale single-crystal two-dimensional transition metal dichalcogenides (TMDs) on insulating substrates is critically important for a variety of high-end applications(1-4). Although the epitaxial growth of wafer-scale graphene and hexagonal boron nitride on metal surfaces has been reported(5-8), these techniques are not applicable for growing TMDs on insulating substrates because of substantial differences in growth kinetics. Thus, despite great efforts(9-20), the direct growth of wafer-scale single-crystal TMDs on insulating substrates is yet to be realized. Here we report the successful epitaxial growth of two-inch single-crystal WS2 monolayer films on vicinal a-plane sapphire surfaces. In-depth characterizations and theoretical calculations reveal that the epitaxy is driven by a dual-coupling-guided mechanism, where the sapphire plane-WS2 interaction leads to two preferred antiparallel orientations of the WS2 crystal, and sapphire step edge-WS2 interaction breaks the symmetry of the antiparallel orientations. These two interactions result in the unidirectional alignment of nearly all the WS2 islands. The unidirectional alignment and seamless stitching of WS2 islands are illustrated via multiscale characterization techniques; the high quality of WS2 monolayers is further evidenced by a photoluminescent circular helicity of similar to 55%, comparable to that of exfoliated WS2 flakes. Our findings offer the opportunity to boost the production of wafer-scale single crystals of a broad range of two-dimensional materials on insulators, paving the way to applications in integrated devices. ko
dc.language 영어 ko
dc.publisher NATURE RESEARCH ko
dc.title Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-85119001115 ko
dc.identifier.wosid 000718769300001 ko
dc.type.rims ART ko
dc.identifier.doi 10.1038/s41565-021-01004-0 ko
dc.identifier.url ko
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