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- Kim, Dai-Sik
- Nano Optics Group
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 949 | - |
| dc.citation.number | 8 | - |
| dc.citation.startPage | 946 | - |
| dc.citation.title | PHYSICAL REVIEW LETTERS | - |
| dc.citation.volume | 64 | - |
| dc.contributor.author | KIM, DS | - |
| dc.contributor.author | YU, PY | - |
| dc.date.accessioned | 2023-12-22T13:09:30Z | - |
| dc.date.available | 2023-12-22T13:09:30Z | - |
| dc.date.created | 2021-10-22 | - |
| dc.date.issued | 1990-02 | - |
| dc.description.abstract | Hot electrons and phonons excited in GaAs by subpicosecond laser pulses have been studied by inelastic light scattering for photoexcited electron densities varying between 1017 and 1019cm−3. Transient overshoot of longitudinal-optical (LO) phonon temperature above the electron temperature has been observed. This is explained by the fast production of zone-center LO phonons by hot electrons combined with slower reabsorption of the emitted phonons due to rapid cooling of Γ valley electrons by intervalley scattering. | - |
| dc.identifier.bibliographicCitation | PHYSICAL REVIEW LETTERS, v.64, no.8, pp.946 - 949 | - |
| dc.identifier.doi | 10.1103/PhysRevLett.64.946 | - |
| dc.identifier.issn | 0031-9007 | - |
| dc.identifier.scopusid | 2-s2.0-11944271996 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/54728 | - |
| dc.identifier.url | https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.64.946 | - |
| dc.identifier.wosid | A1990CP24300034 | - |
| dc.language | 영어 | - |
| dc.publisher | AMER PHYSICAL SOC | - |
| dc.title | PHONON TEMPERATURE OVERSHOOT IN GAAS EXCITED BY SUBPICOSECOND LASER-PULSES | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.type.docType | Article | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
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