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김대식

Kim, Dai-Sik
Nano Optics Group
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dc.citation.endPage 2212 -
dc.citation.number 22 -
dc.citation.startPage 2210 -
dc.citation.title APPLIED PHYSICS LETTERS -
dc.citation.volume 56 -
dc.contributor.author KIM, DS -
dc.contributor.author YU, PY -
dc.date.accessioned 2023-12-22T13:09:14Z -
dc.date.available 2023-12-22T13:09:14Z -
dc.date.created 2021-10-22 -
dc.date.issued 1990-05 -
dc.description.abstract A technique using a single picosecond laser beam to excite and probe photoexcited hot electron and hole plasma by inelastic light scattering is proposed. The cooling rate of the hot electrons is determined by varying the pulse width of the laser beam. The technique is illustrated by measuring the subpicosecond cooling of hot carriers in GaAs and InGaAs. The advantages and limitations of the technique are discussed. -
dc.identifier.bibliographicCitation APPLIED PHYSICS LETTERS, v.56, no.22, pp.2210 - 2212 -
dc.identifier.doi 10.1063/1.102969 -
dc.identifier.issn 0003-6951 -
dc.identifier.scopusid 2-s2.0-0001284928 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/54725 -
dc.identifier.url https://aip.scitation.org/doi/10.1063/1.102969 -
dc.identifier.wosid A1990DF14300017 -
dc.language 영어 -
dc.publisher AMER INST PHYSICS -
dc.title SUBPICOSECOND COOLING OF PHOTOEXCITED HOT CARRIERS STUDIED BY ONE-BEAM EXCITE-AND-PROBE RAMAN-SCATTERING -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Physics, Applied -
dc.relation.journalResearchArea Physics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -

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