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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 2212 | - |
dc.citation.number | 22 | - |
dc.citation.startPage | 2210 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 56 | - |
dc.contributor.author | KIM, DS | - |
dc.contributor.author | YU, PY | - |
dc.date.accessioned | 2023-12-22T13:09:14Z | - |
dc.date.available | 2023-12-22T13:09:14Z | - |
dc.date.created | 2021-10-22 | - |
dc.date.issued | 1990-05 | - |
dc.description.abstract | A technique using a single picosecond laser beam to excite and probe photoexcited hot electron and hole plasma by inelastic light scattering is proposed. The cooling rate of the hot electrons is determined by varying the pulse width of the laser beam. The technique is illustrated by measuring the subpicosecond cooling of hot carriers in GaAs and InGaAs. The advantages and limitations of the technique are discussed. | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.56, no.22, pp.2210 - 2212 | - |
dc.identifier.doi | 10.1063/1.102969 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.scopusid | 2-s2.0-0001284928 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/54725 | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.102969 | - |
dc.identifier.wosid | A1990DF14300017 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | SUBPICOSECOND COOLING OF PHOTOEXCITED HOT CARRIERS STUDIED BY ONE-BEAM EXCITE-AND-PROBE RAMAN-SCATTERING | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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