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김대식

Kim, Dai-Sik
Nano Optics Group
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dc.citation.endPage 486 -
dc.citation.number 1 -
dc.citation.startPage 481 -
dc.citation.title PHYSICA STATUS SOLIDI A-APPLIED RESEARCH -
dc.citation.volume 164 -
dc.contributor.author Fischer, AJ -
dc.contributor.author Shan, W -
dc.contributor.author Park, GH -
dc.contributor.author Song, JJ -
dc.contributor.author Kim, DS -
dc.contributor.author Yee, DS -
dc.contributor.author Chang, YC -
dc.contributor.author Horning, R -
dc.contributor.author Goldenberg, B -
dc.contributor.author Jeon, H -
dc.date.accessioned 2023-12-22T12:36:49Z -
dc.date.available 2023-12-22T12:36:49Z -
dc.date.created 2021-10-22 -
dc.date.issued 1997-11 -
dc.description.abstract Spectrally-resolved and time-integrated four-wave-mixing measurements are performed in the femtosecond regime on excitons in GaN epilayers. A comparison between spectrally-resolved and time-integrated data indicates that the excitons in our samples are nearly homogeneously broadened even at low temperature. Strong beating has been observed between the A and B free excitonic resonances. Spectrally-resolved four-wave mixing is used to show that the beats are due to true quantum beating. A phase shift 180 degrees in the quantum beats is observed when changing from a collinear polarization geometry to a cross-linear geometry. The FWM signal is calculated for each polarization geometry in the ultrashort-pulse limit in order to theoretically model the observed phase change. -
dc.identifier.bibliographicCitation PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.164, no.1, pp.481 - 486 -
dc.identifier.doi 10.1002/1521-396X(199711)164:1<481::AID-PSSA481>3.0.CO;2-P -
dc.identifier.issn 0031-8965 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/54677 -
dc.identifier.url https://onlinelibrary.wiley.com/doi/10.1002/1521-396X(199711)164:1%3C481::AID-PSSA481%3E3.0.CO;2-P -
dc.identifier.wosid 000071319400096 -
dc.language 영어 -
dc.publisher WILEY-V C H VERLAG GMBH -
dc.title Coherent-transient four-wave-mixing studies of excitons in a high quality GaN epilayer -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter -
dc.relation.journalResearchArea Materials Science; Physics -
dc.type.docType Article; Proceedings Paper -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus ABSORPTION -
dc.subject.keywordPlus SEMICONDUCTORS -
dc.subject.keywordPlus REFLECTANCE -
dc.subject.keywordPlus TRANSITIONS -
dc.subject.keywordPlus LAYERS -
dc.subject.keywordPlus BEATS -
dc.subject.keywordPlus EDGE -

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