There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.startPage | 106153 | - |
dc.citation.title | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - |
dc.citation.volume | 135 | - |
dc.contributor.author | Kim, Hangeul | - |
dc.contributor.author | Jeon, Hansol | - |
dc.contributor.author | Lee, Dong-Ju | - |
dc.contributor.author | Kim, Ju-Young | - |
dc.date.accessioned | 2023-12-21T15:08:06Z | - |
dc.date.available | 2023-12-21T15:08:06Z | - |
dc.date.created | 2021-10-22 | - |
dc.date.issued | 2021-11 | - |
dc.description.abstract | Thermomechanical reliability remains challenging in through-silicon via (TSV) manufacture, a key technology in three-dimensional packaging of integrated circuits. A primary issue in reliability is the residual stress created during manufacture and operation by mismatch in thermal expansion coefficients of Cu, the TSV filling material, with surrounding materials. Nanoindentation is suggested as a tool to measure the distribution of residual stress in the amorphous top layer near Cu TSVs. Formation of Cu TSV generates the tensile residual stress in the vicinity of the TSVs, and the maximum residual stress in top SiO2 insulating layer is 322 MPa. The residual stress increases as 652 MPa by post-heat treatments, and increases as 390 MPa for higer current density of TSVs electroplating. | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.135, pp.106153 | - |
dc.identifier.doi | 10.1016/j.mssp.2021.106153 | - |
dc.identifier.issn | 1369-8001 | - |
dc.identifier.scopusid | 2-s2.0-85113378956 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/54609 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1369800121004911?via%3Dihub | - |
dc.identifier.wosid | 000702623700005 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.title | Surface residual stress in amorphous SiO2 insulating layer on Si substrate near a Cu through-silicon via (TSV) investigated by nanoindentation | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Engineering; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Nanoindentaion | - |
dc.subject.keywordAuthor | Surface residual stress | - |
dc.subject.keywordAuthor | Through silicon via | - |
dc.subject.keywordAuthor | Copper | - |
dc.subject.keywordAuthor | Microstructure | - |
dc.subject.keywordAuthor | Amorphous SiO2 | - |
dc.subject.keywordPlus | X-RAY MICRODIFFRACTION | - |
dc.subject.keywordPlus | MECHANICAL-PROPERTIES | - |
dc.subject.keywordPlus | SENSING INDENTATION | - |
dc.subject.keywordPlus | PLASTIC-DEFORMATION | - |
dc.subject.keywordPlus | THERMAL-STRESSES | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | COPPER | - |
dc.subject.keywordPlus | RELIABILITY | - |
dc.subject.keywordPlus | RELAXATION | - |
dc.subject.keywordPlus | IMPACT | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.