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DC Field | Value | Language |
---|---|---|
dc.citation.number | 16 | - |
dc.citation.startPage | 163114 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 100 | - |
dc.contributor.author | Ren, Yujie | - |
dc.contributor.author | Zhu, Chaofu | - |
dc.contributor.author | Cai, Weiwei | - |
dc.contributor.author | Li, Huifeng | - |
dc.contributor.author | Ji, Hengxing | - |
dc.contributor.author | Kholmanov, Iskandar | - |
dc.contributor.author | Wu, Yaping | - |
dc.contributor.author | Piner, Richard D. | - |
dc.contributor.author | Ruoff, Rodney S. | - |
dc.date.accessioned | 2023-12-22T05:10:58Z | - |
dc.date.available | 2023-12-22T05:10:58Z | - |
dc.date.created | 2021-10-18 | - |
dc.date.issued | 2012-04 | - |
dc.description.abstract | Graphene grown by chemical vapor deposition on a Cu foil and transferred onto a Si wafer has been used to fabricate a field effect transistor device that was used to study the sensing of SO2 gas. It was found by in-situ measurements that the SO2 strongly p-dopes the graphene and dramatically shifts its Dirac point. This effect was used to monitor the SO2 gas. The detector can be completely reset by thermal annealing at 100 degrees C in high vacuum. The response and recovery of the detector are faster at higher temperatures. Moreover, the sensitivity of the SO2 graphene detector increases proportionally with increasing temperature. | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.100, no.16, pp.163114 | - |
dc.identifier.doi | 10.1063/1.4704803 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.scopusid | 2-s2.0-84859996008 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/54259 | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4704803 | - |
dc.identifier.wosid | 000303128500057 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Detection of sulfur dioxide gas with graphene field effect transistor | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | annealing | - |
dc.subject.keywordAuthor | chemical vapour deposition | - |
dc.subject.keywordAuthor | field effect transistors | - |
dc.subject.keywordAuthor | fullerene devices | - |
dc.subject.keywordAuthor | gas sensors | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | sulphur compounds | - |
dc.subject.keywordPlus | LARGE-AREA GRAPHENE | - |
dc.subject.keywordPlus | GRAPHITE FILMS | - |
dc.subject.keywordPlus | SENSORS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | FOILS | - |
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