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DC Field | Value | Language |
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dc.citation.endPage | 6385 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 6378 | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 6 | - |
dc.contributor.author | Ismach, Ariel | - |
dc.contributor.author | Chou, Harry | - |
dc.contributor.author | Ferrer, Domingo A. | - |
dc.contributor.author | Wu, Yaping | - |
dc.contributor.author | McDonnell, Stephen | - |
dc.contributor.author | Floresca, Herman C. | - |
dc.contributor.author | Covacevich, Alan | - |
dc.contributor.author | Pope, Cody | - |
dc.contributor.author | Piner, Richard | - |
dc.contributor.author | Kim, Moon J. | - |
dc.contributor.author | Wallace, Robert M. | - |
dc.contributor.author | Colombo, Luigi | - |
dc.contributor.author | Ruoff, Rodney S. | - |
dc.date.accessioned | 2023-12-22T05:06:19Z | - |
dc.date.available | 2023-12-22T05:06:19Z | - |
dc.date.created | 2021-10-18 | - |
dc.date.issued | 2012-07 | - |
dc.description.abstract | Atomically smooth hexagonal boron nitride (h-BN) layers have very useful properties and thus potential applications for protective coatings, deep ultraviolet (DUV) emitters, and as a dielectric for nanoelectronics devices. In this paper, we report on the growth of h-BN by a low-pressure chemical vapor deposition (LPCVD) process using diborane and ammonia as the gas precursors. The use of LPCVD allows synthesis of h-BN with a controlled number of layers defined by the growth conditions, temperature, time, and gas partial pressure. Furthermore, few-layer h-BN was also grown by a sequential growth method, and insights into the growth mechanism are described, thus forming the basis of future growth of h-BN by atomic layer epitaxy. | - |
dc.identifier.bibliographicCitation | ACS NANO, v.6, no.7, pp.6378 - 6385 | - |
dc.identifier.doi | 10.1021/nn301940k | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.scopusid | 2-s2.0-84864256527 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/54246 | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/nn301940k | - |
dc.identifier.wosid | 000306673800071 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Toward the Controlled Synthesis of Hexagonal Boron Nitride Films | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | hexagonal boron nitride | - |
dc.subject.keywordAuthor | h-BN | - |
dc.subject.keywordAuthor | CVD | - |
dc.subject.keywordAuthor | sequential growth | - |
dc.subject.keywordAuthor | 2D Raman mapping | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | HIGH-QUALITY | - |
dc.subject.keywordPlus | GRAPHENE ELECTRONICS | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | NI(111) | - |
dc.subject.keywordPlus | NANOSHEETS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | COPPER | - |
dc.subject.keywordPlus | DECOMPOSITION | - |
dc.subject.keywordPlus | NI(100) | - |
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