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DC Field | Value | Language |
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dc.citation.endPage | 883 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 877 | - |
dc.citation.title | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.citation.volume | 11 | - |
dc.contributor.author | Ramon, Michael E. | - |
dc.contributor.author | Parrish, Kristen N. | - |
dc.contributor.author | Chowdhury, Sk Fahad | - |
dc.contributor.author | Magnuson, Carl W. | - |
dc.contributor.author | Movva, Hema C. P. | - |
dc.contributor.author | Ruoff, Rodney S. | - |
dc.contributor.author | Banerjee, Sanjay K. | - |
dc.contributor.author | Akinwande, Deji | - |
dc.date.accessioned | 2023-12-22T04:41:38Z | - |
dc.date.available | 2023-12-22T04:41:38Z | - |
dc.date.created | 2021-10-18 | - |
dc.date.issued | 2012-09 | - |
dc.description.abstract | We demonstrate a 500-nm graphene frequency doubler with a record 3-GHz bandwidth, exceeding the device transit frequency by 50%, a previously unobserved result in graphene, indicating that graphene multiplier devices might be useful beyond their transit frequency. The maximum conversion gain of graphene ambipolar frequency doublers is determined to approach a near lossless value in the quantum capacitance limit. In addition, the experimental performance of graphene transistor frequency detectors is demonstrated, showing responsivity of 25.2 mu A/mu W. The high-frequency performance of these gigahertz devices is enabled by top-gate device fabrication using synthesized graphene transferred onto low capacitance, atomically smooth quartz substrates, affording carrier mobilities as high as 5000 cm(2)/Vu.s. | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.11, no.5, pp.877 - 883 | - |
dc.identifier.doi | 10.1109/TNANO.2012.2203826 | - |
dc.identifier.issn | 1536-125X | - |
dc.identifier.scopusid | 2-s2.0-84866117827 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/54241 | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/6214614 | - |
dc.identifier.wosid | 000308464100004 | - |
dc.language | 영어 | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Three-Gigahertz Graphene Frequency Doubler on Quartz Operating Beyond the Transit Frequency | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Engineering; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Bandwidth | - |
dc.subject.keywordAuthor | doubler | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | quartz | - |
dc.subject.keywordAuthor | radio frequency devices | - |
dc.subject.keywordAuthor | transit frequency | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | FILMS | - |
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