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- Ruoff, Rodney S.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 7788 | - |
| dc.citation.number | 9 | - |
| dc.citation.startPage | 7781 | - |
| dc.citation.title | ACS NANO | - |
| dc.citation.volume | 6 | - |
| dc.contributor.author | Shin, Dong-Wook | - |
| dc.contributor.author | Lee, Hyun Myoung | - |
| dc.contributor.author | Yu, Seong Man | - |
| dc.contributor.author | Lim, Kwang-Soo | - |
| dc.contributor.author | Jung, Jae Hoon | - |
| dc.contributor.author | Kim, Min-Kyu | - |
| dc.contributor.author | Kim, Sang-Woo | - |
| dc.contributor.author | Han, Jae-Hee | - |
| dc.contributor.author | Ruoff, Rodney S. | - |
| dc.contributor.author | Yoo, Ji-Beom | - |
| dc.date.accessioned | 2023-12-22T04:41:34Z | - |
| dc.date.available | 2023-12-22T04:41:34Z | - |
| dc.date.created | 2021-10-18 | - |
| dc.date.issued | 2012-09 | - |
| dc.description.abstract | The intrinsic properties of initially p-type doped graphene (grown by chemical vapor deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the dominant factor governing p-type doping is identified as the H2O/O-2 redox system. Semi-ionic C-F bonding prevents the reaction between the products of the H2O/O-2 redox system and graphene. BOE-treated graphene field effect transistors (FETs) subsequently exposed to air, became p-type doped due to recovery of the H2O/O-2 redox system. In comparison, poly(methyl methacrylate) (PMMA)-coated graphene FETs had improved stability for maintaining the intrinsic graphene electronic properties. | - |
| dc.identifier.bibliographicCitation | ACS NANO, v.6, no.9, pp.7781 - 7788 | - |
| dc.identifier.doi | 10.1021/nn3017603 | - |
| dc.identifier.issn | 1936-0851 | - |
| dc.identifier.scopusid | 2-s2.0-84866687337 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/54239 | - |
| dc.identifier.url | https://pubs.acs.org/doi/10.1021/nn3017603 | - |
| dc.identifier.wosid | 000309040600024 | - |
| dc.language | 영어 | - |
| dc.publisher | AMER CHEMICAL SOC | - |
| dc.title | A Facile Route To Recover Intrinsic Graphene over Large Scale | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
| dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science | - |
| dc.type.docType | Article | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | graphene | - |
| dc.subject.keywordAuthor | transistor | - |
| dc.subject.keywordAuthor | intrinsic properties | - |
| dc.subject.keywordAuthor | buffed oxide etch (BOE) | - |
| dc.subject.keywordAuthor | PMMA | - |
| dc.subject.keywordAuthor | H2O/O-2 redox system | - |
| dc.subject.keywordAuthor | Fermi level | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | SUSPENDED GRAPHENE | - |
| dc.subject.keywordPlus | STAINLESS-STEELS | - |
| dc.subject.keywordPlus | SILICON-NITRIDE | - |
| dc.subject.keywordPlus | REDOX COUPLE | - |
| dc.subject.keywordPlus | HIGH-QUALITY | - |
| dc.subject.keywordPlus | MOLECULES | - |
| dc.subject.keywordPlus | FILMS | - |
| dc.subject.keywordPlus | WATER | - |
| dc.subject.keywordPlus | CONDUCTION | - |
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