File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Ruoff, Rodney S.
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
A Facile Route To Recover Intrinsic Graphene over Large Scale
- Author(s)
- Shin, Dong-Wook, Lee, Hyun Myoung, Yu, Seong Man, Lim, Kwang-Soo, Jung, Jae Hoon, Kim, Min-Kyu, Kim, Sang-Woo, Han, Jae-Hee, Ruoff, Rodney S., Yoo, Ji-Beom
- Issued Date
- 2012-09
- Citation
- ACS NANO, v.6, no.9, pp.7781 - 7788
- Abstract
- The intrinsic properties of initially p-type doped graphene (grown by chemical vapor deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the dominant factor governing p-type doping is identified as the H2O/O-2 redox system. Semi-ionic C-F bonding prevents the reaction between the products of the H2O/O-2 redox system and graphene. BOE-treated graphene field effect transistors (FETs) subsequently exposed to air, became p-type doped due to recovery of the H2O/O-2 redox system. In comparison, poly(methyl methacrylate) (PMMA)-coated graphene FETs had improved stability for maintaining the intrinsic graphene electronic properties.
- Publisher
- AMER CHEMICAL SOC
- ISSN
- 1936-0851
- Keyword (Author)
- graphene, transistor, intrinsic properties, buffed oxide etch (BOE), PMMA, H2O/O-2 redox system, Fermi level
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.