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DC Field | Value | Language |
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dc.citation.endPage | 9625 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 9618 | - |
dc.citation.title | ENERGY & ENVIRONMENTAL SCIENCE | - |
dc.citation.volume | 5 | - |
dc.contributor.author | Zhang, Li Li | - |
dc.contributor.author | Zhao, Xin | - |
dc.contributor.author | Ji, Hengxing | - |
dc.contributor.author | Stoller, Meryl D. | - |
dc.contributor.author | Lai, Linfei | - |
dc.contributor.author | Murali, Shanthi | - |
dc.contributor.author | Mcdonnell, Stephen | - |
dc.contributor.author | Cleveger, Brandon | - |
dc.contributor.author | Wallace, Robert M. | - |
dc.contributor.author | Ruoff, Rodney S. | - |
dc.date.accessioned | 2023-12-22T04:37:22Z | - |
dc.date.available | 2023-12-22T04:37:22Z | - |
dc.date.created | 2021-10-18 | - |
dc.date.issued | 2012-11 | - |
dc.description.abstract | Many researchers have used nitrogen (N) as a dopant and/or N-containing functional groups to enhance the capacitance of carbon electrodes of electrical double layer (EDL) capacitors. However, the physical mechanism(s) giving rise to the interfacial capacitance of the N-containing carbon electrodes is not well understood. Here, we show that the area-normalized capacitance of lightly N-doped activated graphene with similar porous structure increased from 6 mu F cm(-2) to 22 mu F cm(-2) with 0 at%, and 2.3 at% N-doping, respectively. The quantum capacitance of pristine single layer graphene and various N-doped graphene was measured and a trend of upwards shifts of the Dirac Point with increasing N concentration was observed. The increase in bulk capacitance with increasing N concentration, and the increase of the quantum capacitance in the N-doped monolayer graphene versus pristine monolayer graphene suggests that the increase in the EDL type of capacitance of many, if not all, N-doped carbon electrodes studied to date, is primarily due to the modification of the electronic structure of the graphene by the N dopant. It was further found that the quantum capacitance is closely related to the N dopant concentration and N-doping provides an effective way to increase the density of the states of monolayer graphene. | - |
dc.identifier.bibliographicCitation | ENERGY & ENVIRONMENTAL SCIENCE, v.5, no.11, pp.9618 - 9625 | - |
dc.identifier.doi | 10.1039/c2ee23442d | - |
dc.identifier.issn | 1754-5692 | - |
dc.identifier.scopusid | 2-s2.0-84867644255 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/54234 | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2012/EE/c2ee23442d | - |
dc.identifier.wosid | 000310006200048 | - |
dc.language | 영어 | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Nitrogen doping of graphene and its effect on quantum capacitance, and a new insight on the enhanced capacitance of N-doped carbon | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Energy & Fuels; Engineering, Chemical; Environmental Sciences | - |
dc.relation.journalResearchArea | Chemistry; Energy & Fuels; Engineering; Environmental Sciences & Ecology | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | RAMAN-SCATTERING | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | DOPANTS | - |
dc.subject.keywordPlus | ORIGIN | - |
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