Full metadata record
DC Field | Value | Language |
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dc.citation.number | 6 | - |
dc.citation.startPage | 060906 | - |
dc.citation.title | APL MATERIALS | - |
dc.citation.volume | 9 | - |
dc.contributor.author | Cheng, Ting | - |
dc.contributor.author | Sun, Luzhao | - |
dc.contributor.author | Liu, Zhirong | - |
dc.contributor.author | Ding, Feng | - |
dc.contributor.author | Liu, Zhongfan | - |
dc.date.accessioned | 2023-12-21T15:41:24Z | - |
dc.date.available | 2023-12-21T15:41:24Z | - |
dc.date.created | 2021-09-27 | - |
dc.date.issued | 2021-06 | - |
dc.description.abstract | Chemical vapor deposition (CVD) is a promising method for the mass production of high-quality graphene films, and great progress has been made over the last decade. Currently, the CVD growth of graphene is being pushed to achieve further advancements, such as super-clean, ultra-flat, and defect-free materials, as well as controlling the layer, stacking order, and doping level during large-scale preparation. The production of high-quality graphene by CVD relies on an in-depth knowledge of the growth mechanisms, in which theoretical calculations play a crucial role in providing valuable insights into the energy-, time-, and scale-dependent processes occurring during high-temperature growth. Here, we focus on the theoretical calculations and discuss the recent progress and challenges that need to be overcome to achieve controllable growth of high-quality graphene films on transition-metal substrates. Furthermore, we present some state-of-the-art graphene-related structures with novel properties, which are expected to enable new applications of graphene-based materials. (c) 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). | - |
dc.identifier.bibliographicCitation | APL MATERIALS, v.9, no.6, pp.060906 | - |
dc.identifier.doi | 10.1063/5.0051847 | - |
dc.identifier.issn | 2166-532X | - |
dc.identifier.scopusid | 2-s2.0-85107969604 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/54086 | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/5.0051847 | - |
dc.identifier.wosid | 000692319700002 | - |
dc.language | 영어 | - |
dc.publisher | AIP Publishing | - |
dc.title | Theoretical calculation boosting the chemical vapor deposition growth of graphene film | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | SINGLE-CRYSTAL GRAPHENE | - |
dc.subject.keywordPlus | TWISTED BILAYER GRAPHENE | - |
dc.subject.keywordPlus | KINETIC MONTE-CARLO | - |
dc.subject.keywordPlus | GAS-PHASE DYNAMICS | - |
dc.subject.keywordPlus | MOLECULAR-DYNAMICS | - |
dc.subject.keywordPlus | CARRIER MOBILITY | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | IMPLEMENTATION | - |
dc.subject.keywordPlus | APPROXIMATION | - |
dc.subject.keywordPlus | ORIENTATION | - |
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