There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 1475 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1472 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 42 | - |
dc.contributor.author | Yang, Eunyeong | - |
dc.contributor.author | Kim, Kyung Rok | - |
dc.contributor.author | Chang, Jiwon | - |
dc.date.accessioned | 2023-12-21T15:11:51Z | - |
dc.date.available | 2023-12-21T15:11:51Z | - |
dc.date.created | 2021-10-07 | - |
dc.date.issued | 2021-10 | - |
dc.description.abstract | Ferroelectric tunnel junction (FTJ) exploiting the switchable polarization of ferroelectric material holds great potential for the low-power non-volatile memory. Recently, two-dimensional (2D) ferroelectric material CuInP2S6 (CIPS) which can provide ferroelectricity at the ultimate atomic-scale has been successfully introduced in FTJ to achieve significantly improved TER. Here, we present a theoretical study on the performance of FTJ based on CIPS through the quantum transport simulation using kp Hamiltonian obtained from density functional theory. Benchmarking with ferroelectric HfZrO2-based FTJ reveals that much higher TER can be achieved in CIPS-based FTJ due to a lower tunneling potential barrier and a larger tunneling effective mass. | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.42, no.10, pp.1472 - 1475 | - |
dc.identifier.doi | 10.1109/LED.2021.3103518 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.scopusid | 2-s2.0-85116300469 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/54058 | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/9509404 | - |
dc.identifier.wosid | 000701249800019 | - |
dc.language | 영어 | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Theoretical Evaluation of Two-Dimensional Ferroelectric Material CuInP2S6 for Ferroelectric Tunnel Junction Device | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalResearchArea | Engineering | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Two-dimensional materialferroelectricCuInP2S6ferroelectric tunnel junctiondensity functional theoryquantum transport | - |
dc.subject.keywordPlus | TRANSPORT | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.