Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.startPage | 2524 | - |
dc.citation.title | NATURE COMMUNICATIONS | - |
dc.citation.volume | 9 | - |
dc.contributor.author | Kim, Myungsoo | - |
dc.contributor.author | Ge, Ruijing | - |
dc.contributor.author | Wu, Xiaohan | - |
dc.contributor.author | Lan, Xing | - |
dc.contributor.author | Tice, Jesse | - |
dc.contributor.author | Lee, Jack C. | - |
dc.contributor.author | Akinwande, Deji | - |
dc.date.accessioned | 2023-12-21T20:38:53Z | - |
dc.date.available | 2023-12-21T20:38:53Z | - |
dc.date.created | 2021-09-07 | - |
dc.date.issued | 2018-06 | - |
dc.description.abstract | Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Omega are achievable, making MoS2 atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS2 RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS2 switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (f(c)), is about 10 THz for sub-mu m(2) switches with favorable scaling that can afford fc above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering. | - |
dc.identifier.bibliographicCitation | NATURE COMMUNICATIONS, v.9, pp.2524 | - |
dc.identifier.doi | 10.1038/s41467-018-04934-x | - |
dc.identifier.issn | 2041-1723 | - |
dc.identifier.scopusid | 2-s2.0-85049238685 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/53881 | - |
dc.identifier.wosid | 000436548700015 | - |
dc.language | 영어 | - |
dc.publisher | NATURE RESEARCH | - |
dc.title | Zero-static power radio-frequency switches based on MoS2 atomristors | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | MEMS SWITCHES | - |
dc.subject.keywordPlus | PHASE-CHANGE | - |
dc.subject.keywordPlus | RF SWITCHES | - |
dc.subject.keywordPlus | MONOLAYER | - |
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