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Kim, Myungsoo
Nano Electronics and Technology Lab
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Zero-static power radio-frequency switches based on MoS2 atomristors

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dc.contributor.author Kim, Myungsoo ko
dc.contributor.author Ge, Ruijing ko
dc.contributor.author Wu, Xiaohan ko
dc.contributor.author Lan, Xing ko
dc.contributor.author Tice, Jesse ko
dc.contributor.author Lee, Jack C. ko
dc.contributor.author Akinwande, Deji ko
dc.date.available 2021-09-09T08:41:10Z -
dc.date.created 2021-09-07 ko
dc.date.issued 2018-06 ko
dc.identifier.citation NATURE COMMUNICATIONS, v.9, pp.2524 ko
dc.identifier.issn 2041-1723 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/53881 -
dc.description.abstract Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Omega are achievable, making MoS2 atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS2 RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS2 switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (f(c)), is about 10 THz for sub-mu m(2) switches with favorable scaling that can afford fc above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering. ko
dc.language 영어 ko
dc.publisher NATURE RESEARCH ko
dc.title Zero-static power radio-frequency switches based on MoS2 atomristors ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-85049238685 ko
dc.identifier.wosid 000436548700015 ko
dc.type.rims ART ko
dc.identifier.doi 10.1038/s41467-018-04934-x ko
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